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Cited by 19

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Current Balancing for Parallel Connection of Silicon Carbide MOSFETs Using Bus Bar Integrated Magnetic Material

Matsubara, Kazuki, Wada, Keiji·2019·2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
DOI 10.1109/apec.2019.8721777
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Abstract

Power converter circuits are becoming widespread, and higher-voltage and larger-current converter circuits are increasingly used in automotive and utility applications. In particular, research and development on silicon carbide(SiC) power devices are being actively pursued for achieving larger current ratings by connecting SiC power modules in parallel. However, a current imbalance phenomenon may occur in the parallel-connected power modules because of the difference in device characteristics and parasitic impedances. This paper proposes a practical current balancing method for parallel-connected power modules based on only circuit implementations. In addition, a laminated bus bar integrated magnetic material for current balancing in parallel-connected MOSFET modules is proposed based on the analysis results. The validity of the proposed method is clarified through experiments using SiC-MOSFET.

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Research works printed but not linked: 17

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  9. 0, Information of Toroidal core
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  14. 10.1109/APEC.2018.8341422 · DOI
  15. fabre, 2016, Parallel Connection of 1200-V/100-A SiC-MOSFET Half-Bridge Modules, IEEE Transactions on Electrical and Electronic Engineering, 52, 1669
  16. 10.1109/ESARS.2015.7101514 · DOI
  17. 10.1109/ECCE.2009.5316038 · DOI

Cited by

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Metadata

Authors
Matsubara, K., & Wada, K.
Venue
2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
Publisher
IEEE
Published
2019-03
Pages
2688-2693
DOI
10.1109/apec.2019.8721777
Cited by
19
References
1
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CoChat. (2026). Citation check: Current Balancing for Parallel Connection of Silicon Carbide MOSFETs Using Bus Bar Integrated Magnetic Material. https://app.cochat.ai/papers/10.1109/apec.2019.8721777
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Matsubara, K., & Wada, K. (2019). Current Balancing for Parallel Connection of Silicon Carbide MOSFETs Using Bus Bar Integrated Magnetic Material. 2019 IEEE Applied Power Electronics Conference and Exposition (APEC). https://doi.org/10.1109/apec.2019.8721777

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.