Accurate Temperature Measurement of Active Area for Wide-Bandgap Power Semiconductors
Abstract
High breakdown voltage, low on-resistance, and high speed have made wide-bandgap power semiconductors suitable for many applications such as wireless power transfer, electric vehicles, hybrid and electric aircraft, and aerospace. However, the maximum power density of these devices is limited by the channel temperature rise. Thus, accurate temperature measurement of the active area is essential in research on wide-bandgap power semiconductors, which is often hampered by packaging and cooling methods. Employing temperature sensitive electrical parameters (TSEP) is a promising approach for the temperature measurement of power semiconductors. This paper uses a vector of three TSEPs, i.e., the gate-source voltage biased at weak, moderate, and strong inversion regions, to extract more information for accurate temperature measurement of the active area in GaN FETs.
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GaN HEMTs conduct current through a two-dimensional electron gas formed within the AlGaN/GaN heterostructure, focusing conduction losses into an ultrathin channel and thereby intensifying localized heating.
“In contrast, GaN HEMTs conduct current through a two-dimensional electron gas (2DEG) formed within the AlGaN/GaN heterostructure, focusing conduction losses into an ultrathin channel and thereby intensifying localized heating [1,3,16,17].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [16]
Heteroepitaxy of GaN on foreign substrates yields high thermal boundary resistance at the interface, which raises channel temperature and complicates operation at high power densities.
“This heteroepitaxy yields high TBR at the interface, which raises channel temperature and complicates operation at high power densities [16].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [16]
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Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34 · see citing works
“This heteroepitaxy yields high TBR at the interface, which raises channel temperature and complicates operation at high power densities [16].”
- Authors
- Ramyar, A., Lou, Y., & Avestruz, A.-T.
- Affiliations
- University of Michigan (US)
- Venue
- 2023 IEEE 24th Workshop on Control and Modeling for Power Electronics (COMPEL)
- Publisher
- IEEE
- Published
- 2023-06-25
- Pages
- 1-8
- ISSN
- 2151-0997 (ISSN-L)
- OpenAlex
- W4386104317
- Cited by
- 1
- References
- 28
- Citations by year
- 2025: 1
- FWCI
- 0.49
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE ... Workshop on Control and Modeling for Power Electronics (publishedVersion)
- Funders
- National Science Foundation
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Ga2O3 and related materials
- Keywords
- temperature measurement, wide bandgap power semiconductors, GaN FET, temperature-sensitive electrical parameters, gate-source voltage
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