The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Analysis on Static Current Sharing of N-Paralleled Silicon Carbide MOSFETs
Abstract
The influences of on-resistances and parasitic elements on the static current sharing of N-paralleled discrete silicon carbide (SiC) MOSFETs are analyzed in this paper. First of all, the limitation of self-balancing effect of MOSFETs caused by the positive temperature dependent on-resistance is quantitatively analyzed. From a statistical analysis, the current sharing distribution according to the spread of on-resistances is presented, which helps to screen the proper devices based on the current sharing requirement. Furthermore, a general circuit model is proposed to analyze the effect of inevitable circuit parasitic elements on current sharing with a given current slew rate. With the recursive circuit model, current imbalance contributed by parasitic resistances and inductances can be separately calculated, which can be used to guide the hardware design to improve current sharing in a real converter. The theoretical analysis is verified by experimental results.
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“Although the Rds_on has a positive coefficient to the junction temperature, which helps to mitigate steady-state imbalance current, the sensitivity of the temperature dependence of Rds_on to junction temperature is not enough compared to its Si counterpart, thus imbalance selfsuppression effect is limited [8], [9].”
From An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules (2023) · cites this paper as [9]
In the citing paper
“The variation in drain-to-source on-state resistance, i.e., Rds_on, also contributes to steady-state imbalance current.”
From An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules (2023) · cites this paper as [9]
Citations
Cites
Burkart, R. M., Bahmani, A., Kieferndorf, F., Grecki, F., Park, K.-B., & Canales, F. (2019) · 2019 20th International Symposium on Power Electronics (Ee) · doi:10.1109/pee.2019.8923363 · Cited by 7
Research works printed but not linked: 8
- 10.1109/TPEL.2020.2978718 · DOI
- 10.1109/TIE.2017.2716868 · DOI
- 10.1109/TPEL.2019.2954716 · DOI · Paper page
- 10.1109/TPEL.2020.3009008 · DOI
- 10.23919/ICPE2019-ECCEAsia42246.2019.8797172 · DOI
- 10.1109/TPEL.2015.2408054 · DOI · Paper page
- 10.1109/ECCE44975.2020.9236326 · DOI · Paper page
- 10.1109/MIE.2012.2193291 · DOI
Cited by
An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules
Lin, N., Zhao, Y., & Mantooth, H. A. (2023) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2023.3306750 · Cited by 13
Metadata
- Authors
- He, Y., Wang, X., Zhang, J., Shao, S., Li, H., & Luo, C.
- Venue
- 2021 IEEE Energy Conversion Congress and Exposition (ECCE)
- Publisher
- IEEE
- Published
- 2021-10-10
- Pages
- 5590-5596
- Cited by
- 6
- References
- 1
- Licence
- Funders
- Eaton Corporation
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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.