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Cited by 146

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Effect of Asymmetric Layout and Unequal Junction Temperature on Current Sharing of Paralleled SiC MOSFETs With Kelvin-Source Connection

Zhao, Cheng, Wang, Laili, Zhang, Fan·2020·IEEE Transactions on Power Electronics
DOI 10.1109/tpel.2019.2954716
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Abstract

Parallel connection of silicon carbide (SiC) mosfets is a popular solution for high-capacity applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin-source connection is widely employed. However, the influences of asymmetric layout and unequal junction temperature on current sharing of paralleled SiC mosfets with Kelvin-source connection are not clear. This article addresses the issue for the first time by theoretical analysis and experimental verifications. The mechanism of current imbalance resulting from asymmetric layout and unequal junction temperature in the case with Kelvin-source connection is comprehensively investigated. Then, some significant discoveries are obtained. The static current sharing performance can be affected by drain and power source parasitic inductance, which is seldom mentioned before. Besides, this article first points out that the effect of power source parasitic inductance on dynamic current sharing is dominant compared with other parasitic inductance. What is more, the thermal-electric analyzing results suggest that there is a risk of thermal runaway for paralleled SiC mosfets with Kelvin-source connection at high switching frequency due to positively temperature-dependent dynamic current and switching losses. Based on the discoveries, some guidelines are provided for layout design and application of paralleled SiC mosfets with Kelvin-source connection.

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Citations

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Research works printed but not linked: 28

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Metadata

Authors
Zhao, C., Wang, L., & Zhang, F.
Venue
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2020-07
Volume
35
Issue
7
Pages
7392-7404
ISSN
  • 0885-8993
  • 1941-0107
DOI
10.1109/tpel.2019.2954716
Cited by
146
References
2
Licence
Funders
  • National Key Research and Development Program of China Stem Cell and Translational Research (2018YFB0905801)
  • Shaanxi Key Research and Development Plan (2018GY-043)

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CoChat. (2026). Citation check: Effect of Asymmetric Layout and Unequal Junction Temperature on Current Sharing of Paralleled SiC MOSFETs With Kelvin-Source Connection. https://app.cochat.ai/papers/10.1109/tpel.2019.2954716
The paper
Zhao, C., Wang, L., & Zhang, F. (2020). Effect of Asymmetric Layout and Unequal Junction Temperature on Current Sharing of Paralleled SiC MOSFETs With Kelvin-Source Connection. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2019.2954716

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.