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High-performance heat sinking for VLSI
Abstract
The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high-aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water-cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71°C above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh-speed VLSI circuits.
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Citations
Cited by
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Mudawar, I. (2001) · IEEE Transactions on Components and Packaging Technologies · doi:10.1109/6144.926375 · Cited by 939
Convective Heat and Mass Transfer
Ghiaasiaan, S. M. (2011) · Cambridge University Press eBooks · doi:10.1017/cbo9780511800603 · Cited by 788
Cooling of photovoltaic cells under concentrated illumination: a critical review
ROYNE, A., DEY, C., & MILLS, D. (2005) · Solar Energy Materials and Solar Cells · doi:10.1016/j.solmat.2004.09.003 · Cited by 760
Heat transfer for water flow in trapezoidal silicon microchannels
Qu, W., Mala, G. M., & Li, D. (2000) · International Journal of Heat and Mass Transfer · doi:10.1016/s0017-9310(00)00045-4 · Cited by 432
Nanoparticles enhanced phase change materials (NePCMs)-A recent review
Tariq, S. L., Ali, H. M., Akram, M. A., Janjua, M. M., & Ahmadlouydarab, M. (2020) · Applied Thermal Engineering · doi:10.1016/j.applthermaleng.2020.115305 · Cited by 405
Metadata
- Authors
- Tuckerman, D. B., & Pease, R. F. W.
- Venue
- IEEE Electron Device Letters
- Published
- 1981-05
- Volume
- 2
- Issue
- 5
- Pages
- 126-129
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2156259175
- Cited by
- 5,291
- References
- 0
- FWCI
- 64.26
- Type
- journal article
- Language
- en
- Open access
- closed
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- Tuckerman, D. B., & Pease, R. F. W. (1981). High-performance heat sinking for VLSI. IEEE Electron Device Letters. https://doi.org/10.1109/edl.1981.25367
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
