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Cited by 41Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesPhotonic and Optical Devices

The DOI matches its Crossref record.

Transconductance of Silicon-on-insulator (SOI) MOSFET's

Colinge, J.-P.·1985·IEEE Electron Device Letters
DOI 10.1109/edl.1985.26234
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Abstract

Transconductance of n-channel Silicon-on-Insulator (SOI) MOSFET's has been measured with backside gate (substrate) bias as a parameter. For negative values of the backside gate bias, transconductance of SOI transistors is similar to that of bulk devices. On the other hand, transconductance exhibits an unusual behavior when backside gate is positively biased. This is caused by mutual influence between the front-and the backside gate-related depletion zones. Modeling of transconductance using numerical solution of Poisson's equation show good agreement with experimental results.

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Metadata

Authors
Colinge, J.-P.
Affiliations
Hewlett-Packard (United States) (US)
Corresponding author
Colinge, J.-P.
Venue
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
1985-11
Volume
6
Issue
11
Pages
573-574
ISSN
0741-3106 (ISSN-L)
DOI
10.1109/edl.1985.26234
OpenAlex
W2035498184
Cited by
41
References
0
Citations by year
2025: 1 · 2023: 1 · 2021: 1 · 2020: 3 · 2019: 1 · 2018: 2 · 2016: 1 · 2015: 1 · 2014: 2 · 2013: 1 · 2012: 2
FWCI
2.70
Type
journal article
Language
en
Open access
closed
Licence
ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
Locations
IEEE Electron Device Letters (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
Keywords
transconductance, silicon-on-insulator MOSFET, substrate bias, n-channel MOSFET, depletion region

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CoChat. (2026). Citation check: Transconductance of Silicon-on-insulator (SOI) MOSFET's. https://app.cochat.ai/papers/10.1109/edl.1985.26234
The paper
Colinge, J.-P. (1985). Transconductance of Silicon-on-insulator (SOI) MOSFET's. IEEE Electron Device Letters. https://doi.org/10.1109/edl.1985.26234