The DOI matches its Crossref record.
Simulation and experimental investigation of parallel connected IGBTs
Abstract
The increasing demand for large power ratings and the physically limited maximum current density of semiconductor devices in power electronics make the connection of semiconductor in parallel or series an interesting alternative for high power applications. The major problem of the IGBT parallel connection is the current unbalance of parallel devices, which requires the selection of the devices, a manual parameterization of gate units and a substantial device derating in state of the art high power IGBT Voltage Source Converters. This paper presents a new scheme for the non-destructive parameter extraction of IGBTs and a simulative study of the influence of different parameters on the current distribution of parallel connected IGBTs. The investigations show that the delay time of parallel switched IGBTs can be used to achieve a balanced current distribution despite potentially varying parameters like gate-emitter threshold voltages and internal gate resistances. The results are experimentally verified by measurements in a 500 V, 800A test set-up applying 1700V, 450 A IGBTs and inverse diodes.
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“This demonstrates the balanced current sharing during turn-off after employing this technique, and improved current imbalance during turn-on as well.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [44]
In the citing paper
“The delay time compensation principle is presented in [42][43][44][45] considering the voltage measurement between the emitter and auxiliary emitter (V eE ).”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [44]
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Cited by
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
Tripathi, R. N., & Omura, I. (2023) · Electronics · doi:10.3390/electronics12183826 · Cited by 14
Metadata
- Authors
- Alvarez, R., Fink, K., & Bernet, S.
- Venue
- 2010 IEEE International Conference on Industrial Technology
- Publisher
- IEEE
- Published
- 2010
- Pages
- 824-831
- Cited by
- 16
- References
- 0
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.