The DOI matches its Crossref record, with a small difference in title or year.
Paralleling intelligent IGBT power modules with active gate-controlled current balancing
Abstract
Due to tolerances of semiconductors, gate-drive and mechanical parameters, the total load current is not shared equally between paralleled IGBT or intelligent power modules. A closed loop control is presented to balance the current in an almost unlimited number of paralleled modules. The theoretical assumptions have been verified through practical measurements on a n inductive clamped buck converter topology.
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Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
In the citing paper
“The appropriate adjustment of the gate voltage can provide improved static current sharing.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [39]
In the citing paper
“A gate voltage control method is mentioned in [39] for the static current balancing of the parallel IGBT devices considering the negative temperature coefficient.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [39]
In the citing paper
“The results are demonstrated for four parallel connected IGBT devices through gate delay control, which achieves improved current sharing.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [39]
Citations
Cites
No references could be resolved yet.
Research works printed but not linked: 11
- ochi, 1994, Driving and protecting large die IGBT and MOS power devices, European Power Electronics Conference, 14 ff
- 10.1109/IAS.1990.152401 · DOI
- 10.1109/ISPSD.1994.583616 · DOI
- 10.1109/ISPSD.1994.583660 · DOI
- rabl, 1994, Internal publication of the LEG Grenoble, 3
- zwanziger, 1992, ETG Fachbericht 39, 265ff
- springmann, 1991, Application of parallel-connected IGBT's in frequency converters in the medium power range, Proc Power Conversion Conf, 490 ff
- 10.1109/ISPSD.1994.583654 · DOI
- gerster, 1995, Gate-controlled dv/dt and di/dt-limitation in high power IGBT converters, EPE Journal, 5, 7ff
- tadros, 1991, Design aspects of high power PWM inverters with IGBT, Proceedings of the European Power Electronics Conference
- dapkus, 1994, Parallel operation of IGBTs, Proceedings of the 26 Intelligent Motion conference, 25 ff
Cited by
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
Tripathi, R. N., & Omura, I. (2023) · Electronics · doi:10.3390/electronics12183826 · Cited by 14
Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs
Wu, Y., Sun, Y., & Lin, Y. (2014) · Journal of Power Electronics · doi:10.6113/jpe.2014.14.4.788 · Cited by 5
Metadata
- Authors
- Hofer, P., Karrer, N., & Gerster, C.
- Venue
- PESC Record. 27th Annual IEEE Power Electronics Specialists Conference
- Publisher
- IEEE
- Published
- 2002
- Volume
- 2
- Pages
- 1312-1316
- Cited by
- 38
- References
- 0
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- CoChat. (2026). Citation check: Paralleling intelligent IGBT power modules with active gate-controlled current balancing. https://app.cochat.ai/papers/10.1109/pesc.1996.548751
- The paper
- Hofer, P., Karrer, N., & Gerster, C. (2002). Paralleling intelligent IGBT power modules with active gate-controlled current balancing. PESC Record. 27th Annual IEEE Power Electronics Specialists Conference. https://doi.org/10.1109/pesc.1996.548751
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.