The DOI matches its Crossref record.
On-the-flycharacterization of NBTI in ultra-tihin gate oxide PMOSFET's
Abstract
We propose a new methodology to characterize the negative bias temperature instability (NBTI) degradation without inherent recovery. The extracted parameters are the linear drain current, the threshold voltage and the transconductance. We compare the new and the usual methodologies and show a logarithmic time dependence of both the degradation and the recovery. The hole trapping (detrapping) is directly correlated to the V/sub T/ degradation (recovery), and plays the main role in the NBTI in ultra-thin gate-oxide PMOSFET's.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
Grasser, T. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2011.09.002 · Cited by 554
Review on high-k dielectrics reliability issues
Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., & Ghibaudo, G. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.845236 · Cited by 533
Self-citation
Metadata
- Authors
- Denais, M., Bravaix, A., Huard, V., Parthasarathy, C., Ribes, G., Perrier, F., Rey-Tauriac, Y., & Revil, N.
- Venue
- IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
- Publisher
- IEEE
- Published
- 2005-04-19
- Pages
- 109-112
- OpenAlex
- W1592779097
- Cited by
- 245
- References
- 0
- FWCI
- 49.05
- Type
- conference paper
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: On-the-flycharacterization of NBTI in ultra-tihin gate oxide PMOSFET's. https://app.cochat.ai/papers/10.1109/iedm.2004.1419080
- The paper
- Denais, M., Bravaix, A., Huard, V., Parthasarathy, C., Ribes, G., Perrier, F., Rey-Tauriac, Y., & Revil, N. (2005). On-the-flycharacterization of NBTI in ultra-tihin gate oxide PMOSFET's. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. https://doi.org/10.1109/iedm.2004.1419080
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
