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Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity
Abstract
A 30×30 nm2HfOxresistance random access memory (RRAM) with excellent electrical performances is demonstrated for the scaling feasibility in this work. A 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully. The device yield of the 1 Kb array is 100%, and the endurance for these devices can exceed 106cycles by a pulse width of 40 ns. Two effective verification methods, which make a tight distribution of high resistance (RHIGH) and low resistance (RLOW) are proposed for the array to ensure a good operation window. A thin AlOxbuffer layer under the HfOxlayer was adopted to enhance the read disturb immunity. Without large parasitic capacitance, the 1T1R RRAM devices exhibit excellent program (PGM)/erase (ERS) disturb immunity.
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Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Self-citationGuan, X., Yu, S., & Wong, H.-S. P. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2184545 · Cited by 355
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
Chen, Y. Y., Goux, L., Clima, S., Govoreanu, B., Degraeve, R., Kar, G. S., Fantini, A., Groeseneken, G., Wouters, D. J., & Jurczak, M. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2241064 · Cited by 271
Self-citationMicroscopic Modeling of HfOx RRAM Operations: From Forming to Switching
Padovani, A., Larcher, L., Pirrotta, O., Vandelli, L., & Bersuker, G. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2418114 · Cited by 219
Yin, S., Sun, X., Yu, S., & Seo, J.-S. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3015178 · Cited by 171
“However, severe limitations still exist for applying resistive devices or resistive random access memories (RRAMs) for practical large-scale neural computing due to (1) device-level non-idealities, e.g., non-linearity in programming weights, variability, selector requirement, and endurance, (2) inefficiency in represe…”
Background
Metadata
- Authors
- Chen, Y. S., Lee, H. Y., Chen, P. S., Gu, P. Y., Chen, C. W., Lin, W. P., Liu, W. H., Hsu, Y. Y., Sheu, S. S., Chiang, P. C., Chen, W. S., Chen, F. T., Lien, C. H., & Tsai, M.-J.
- Venue
- 2009 IEEE International Electron Devices Meeting (IEDM)
- Publisher
- IEEE
- Published
- 2009-12
- Pages
- 1-4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W2105408739
- Cited by
- 205
- References
- 0
- FWCI
- 24.00
- Type
- conference paper
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity. https://app.cochat.ai/papers/10.1109/iedm.2009.5424411
- The paper
- Chen, Y. S., Lee, H. Y., Chen, P. S., Gu, P. Y., Chen, C. W., Lin, W. P., Liu, W. H., Hsu, Y. Y., Sheu, S. S., Chiang, P. C., Chen, W. S., Chen, F. T., Lien, C. H., & Tsai, M.-J. (2009). Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity. 2009 IEEE International Electron Devices Meeting (IEDM). https://doi.org/10.1109/iedm.2009.5424411
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