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Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors
Abstract
We report the discovery of ferroelectricity in crystalline hafnium silicon oxide. If HfO2based thin films, at a composition where the tetragonal phase is not yet stable, are crystallized in presence of a cap, the formation of an orthorhombic phase is observed. o-HfO2shows a piezoelectric response, while a polarization measurements exhibit a remanent polarization above 10 μC/cm2at a coercive field of 1 MV/cm, confirming this phase to be ferroelectric. Transistors fabricated with this material exhibit a permanent and switchable shift of the threshold voltage, allowing the realization of CMOS-compatible ferroelectric field effect transistors (FeFET) with sub 10 nm gate insulators for the first time.
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Cited by
The Past, the Present, and the Future of Ferroelectric Memories
Mikolajick, T., Schroeder, U., & Slesazeck, S. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2976148 · Cited by 486
Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
Yurchuk, E., Muller, J., Muller, S., Paul, J., Pesic, M., van Bentum, R., Schroeder, U., & Mikolajick, T. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2588439 · Cited by 369
Self-citationOn the Reliability of In-Memory Computing: Impact of Temperature on Ferroelectric TCAM
Thomann, S., Li, C., Zhuo, C., Prakash, O., Yin, X., Hu, X. S., & Amrouch, H. (2021) · 2021 IEEE 39th VLSI Test Symposium (VTS) · doi:10.1109/vts50974.2021.9441038 · Cited by 24
Metadata
- Authors
- Boscke, T. S., Muller, J., Brauhaus, D., Schroder, U., & Bottger, U.
- Venue
- 2011 International Electron Devices Meeting
- Publisher
- IEEE
- Published
- 2011-12
- Pages
- 24.5.1-24.5.4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W2039011822
- Cited by
- 355
- References
- 0
- FWCI
- 4.78
- Type
- conference paper
- Language
- en
- Open access
- closed
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- Boscke, T. S., Muller, J., Brauhaus, D., Schroder, U., & Bottger, U. (2011). Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors. 2011 International Electron Devices Meeting. https://doi.org/10.1109/iedm.2011.6131606
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