The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
Abstract
Ferroelectric field effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2) thin films show high potential for future embedded nonvolatile memory applications. However, HfO2films besides their recently discovered ferroelectric behavior are also prone to undesired charge trapping effects. Therefore, the scope of this paper is to verify the possibility of the charge trapping during standard operation of the HfO2-based FeFET memories. The kinetics of the charge trapping and its interplay with the ferroelectric polarization switching are analyzed in detail using the single-pulse ID-VGtechnique. Furthermore, the impact of the charge trapping on the important memory characteristics such as retention and endurance is investigated.
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Cites
Semiconductor Material and Device Characterization
Schroder, D. K. (2005) · Wiley eBooks · doi:10.1002/0471749095 · Cited by 7,435
Ferroelectricity in hafnium oxide thin films
Böscke, T. S., Müller, J., Bräuhaus, D., Schröder, U., & Böttger, U. (2011) · Applied Physics Letters · doi:10.1063/1.3634052 · Cited by 2,832
High dielectric constant gate oxides for metal oxide Si transistors
Robertson, J. (2006) · Reports on Progress in Physics · doi:10.1088/0034-4885/69/2/r02 · Cited by 1,726
A review of recent MOSFET threshold voltage extraction methods
Ortiz-Conde, A., Garcı́a Sánchez, F. J., Liou, J. J., Cerdeira, A., Estrada, M., & Yue, Y. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00027-6 · Cited by 999
Vacancy and interstitial defects in hafnia
Foster, A. S., Lopez Gejo, F., Shluger, A. L., & Nieminen, R. M. (2002) · Physical Review B · doi:10.1103/physrevb.65.174117 · Cited by 651
Review on high-k dielectrics reliability issues
Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., & Ghibaudo, G. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.845236 · Cited by 533
Muller, J., Boscke, T. S., Muller, S., Yurchuk, E., Polakowski, P., Paul, J., Martin, D., Schenk, T., Khullar, K., Kersch, A., et al. (2013) · 2013 IEEE International Electron Devices Meeting · doi:10.1109/iedm.2013.6724605 · Cited by 506
Self-citationJang, J. H., Kim, H., Cho, W., Cho, H., Kim, J., Shim, S. I., Jang, Y., Jeong, J., Son, B., Kim, D. W., et al. (2006) · Symposium on VLSI Technology · Cited by 425
Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors
Boscke, T. S., Muller, J., Brauhaus, D., Schroder, U., & Bottger, U. (2011) · 2011 International Electron Devices Meeting · doi:10.1109/iedm.2011.6131606 · Cited by 355
Self-citationNegative oxygen vacancies in HfO2 as charge traps in high-k stacks
Gavartin, J. L., Muñoz Ramo, D., Shluger, A. L., Bersuker, G., & Lee, B. H. (2006) · Applied Physics Letters · doi:10.1063/1.2236466 · Cited by 350
Cited by
The Past, the Present, and the Future of Ferroelectric Memories
Mikolajick, T., Schroeder, U., & Slesazeck, S. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2976148 · Cited by 486
Self-citationEnergy-efficient memcapacitor devices for neuromorphic computing
Demasius, K.-U., Kirschen, A., & Parkin, S. (2021) · Nature Electronics · doi:10.1038/s41928-021-00649-y · Cited by 207
“As a memory principle, ferroelectric-assisted charge trapping (polarization charge attracts carriers and thus promotes trapping) was used to combine the advantages of both principles 28,29 , whereas the tunnelling oxide was 2.5 nm thick to avoid charge detrapping.”
MethodInfluential
Metadata
- Authors
- Yurchuk, E., Muller, J., Muller, S., Paul, J., Pesic, M., van Bentum, R., Schroeder, U., & Mikolajick, T.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2016-09
- Volume
- 63
- Issue
- 9
- Pages
- 3501-3507
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2482978312
- Cited by
- 369
- References
- 16
- FWCI
- 7.01
- Type
- journal article
- Language
- en
- Open access
- closed
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- Yurchuk, E., Muller, J., Muller, S., Paul, J., Pesic, M., van Bentum, R., Schroeder, U., & Mikolajick, T. (2016). Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2016.2588439
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