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10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Abstract
We report on world's smallest HfO2-based Resistive RAM (RRAM) cell to date, featuring a novel Hf/HfOxresistive element stack, with an area of less than 10×10 nm2, fast ns-range on/off switching times at low-voltages and with a switching energy per bit of7cycles, large on/off verified-window (>;50), no closure of the on/off window after 30hrs/200C and failure-free device operation after 30hrs/250C thermal stress, the major device-level nonvolatile memory requirements are met. Furthermore, we clarify the impact of film crystallinity on cell operation from a scalability viewpoint, the role of the cap layer and bring insight into the switching mechanisms.
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Citations
Cited by
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Self-citationIn-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
“Resistive switching devices, such as RRAM, offer several advantages in digital computing, such as the direct access by interconnect lines, the capability to electrically reconfigure the device, and nanoscale miniaturization [40].”
BackgroundThe future of electronics based on memristive systems
Zidan, M. A., Strachan, J. P., & Lu, W. D. (2018) · Nature Electronics · doi:10.1038/s41928-017-0006-8 · Cited by 2,138
Synaptic electronics: materials, devices and applications
Kuzum, D., Yu, S., & Philip Wong, H.-S. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/38/382001 · Cited by 1,258
Metadata
- Authors
- Govoreanu, B., Kar, G. S., Chen, Y.-Y., Paraschiv, V., Kubicek, S., Fantini, A., Radu, I. P., Goux, L., Clima, S., Degraeve, R., Jossart, N., Richard, O., Vandeweyer, T., Seo, K., Hendrickx, P., Pourtois, G., Bender, H., Altimime, L., Wouters, D. J., Kittl, J. A., & Jurczak, M.
- Venue
- 2011 International Electron Devices Meeting
- Publisher
- IEEE
- Published
- 2011-12
- Pages
- 31.6.1-31.6.4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W2025535306
- Cited by
- 624
- References
- 0
- FWCI
- 51.32
- Type
- conference paper
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation. https://app.cochat.ai/papers/10.1109/iedm.2011.6131652
- The paper
- Govoreanu, B., Kar, G. S., Chen, Y.-Y., Paraschiv, V., Kubicek, S., Fantini, A., Radu, I. P., Goux, L., Clima, S., Degraeve, R., Jossart, N., Richard, O., Vandeweyer, T., Seo, K., Hendrickx, P., Pourtois, G., Bender, H., Altimime, L., Wouters, D. J., . . . Jurczak, M. (2011). 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation. 2011 International Electron Devices Meeting. https://doi.org/10.1109/iedm.2011.6131652
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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