Binary and Ternary True Random Number Generators Based on Spin Orbit Torque
Abstract
In this work, we have experimentally demonstrated the binary- and ternary-True Random Number Generators (B-TRNG and T-TRNG) based on the stochastic switching characteristics of the nano-scale Ta/CoFeB/MgO heterostructures with perpendicular magnetization anisotropy. For the first time, the random code generation utilizes the spin orbit torque (SOT) induced by current flowing in the heavy metal underneath the CoFeB layer. The 3-XOR post-processed random binary codes have passed the NIST SP800-22 test. Furthermore, the T-TRNG in the same ferromagnetic heterostructure with dual magnetic domains are also demonstrated, which provides a higher security level than its B-TRNG counterpart.
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Their lack of compatibility with CMOS fabrication standards makes it difficult to apply them directly to the current CMOS logic platform used for mass production.
“Moreover, their lack of compatibility with CMOS fabrication standards makes it difficult to apply them directly to the current CMOS logic platform used for mass production.”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [14]
tRNGs such as RRAM or MRAM are widely studied given their inherent switching stochasticity as an entropy source, which relies on material-induced variations.
“For example, tRNGs such as RRAM or MRAM, which are not Si-based complementary metal-oxide semiconductor (CMOS) devices, are widely studied given their inherent switching stochasticity as an entropy source, which relies on material-induced variations (11–18).”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [14]
These tRNGs require a few entropy extraction circuits, each of which consumes power at the milliwatt level.
“However, these tRNGs require a few entropy extraction circuits, each of which consumes power at the milliwatt level.”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [14]
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Self-citationUltra-Fast Perpendicular Spin–Orbit Torque MRAM
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Cryptographic transistor for true random number generator with low power consumption
Kim, S.-I., You, H.-J., Kim, M.-S., An, U.-S., Kim, M.-S., Lee, D. H., Ryu, S.-T., & Choi, Y.-K. (2024) · Science Advances · doi:10.1126/sciadv.adk6042 · Cited by 33 · see citing works
- Authors
- Chen, H., Zhang, S., Xu, N., Song, M., Li, X., Li, R., Zeng, Y., Hong, J., & You, L.
- Affiliations
- Huazhong University of Science and Technology (CN)
- University of California, Berkeley (US)
- Hubei University (CN)
- Venue
- 2018 IEEE International Electron Devices Meeting (IEDM)
- Publisher
- IEEE
- Published
- 2018-12
- Pages
- 36.5.1-36.5.4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W2911438577
- Cited by
- 28
- References
- 13
- Citations by year
- 2026: 2 · 2025: 6 · 2024: 6 · 2023: 4 · 2022: 2 · 2021: 4 · 2020: 2 · 2019: 2
- FWCI
- 8.37
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Technical digest - International Electron Devices Meeting/Technical digest (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Magnetic properties of thin films
- Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
- Physical Sciences › Computer Science › Computer Vision and Pattern Recognition › Chaos-based Image/Signal Encryption
- Keywords
- true random number generator, spin-orbit torque, perpendicular magnetic anisotropy, stochastic switching, hardware security
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