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Cited by 22Semiconductor materials and devicesIntegrated Circuits and Semiconductor Failure AnalysisCopper Interconnects and Reliability

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Reliability Characterization for Advanced DRAM using HK/MG + EUV Process Technology

Lee, S., Kim, G.-J., Lee, N-H., Lee, KW., Woo, BW., Jin, J., Kim, JG., Lee, YS., Kim, HS., Pae, S.·2021·2021 IEEE International Electron Devices Meeting (IEDM)
DOI 10.1109/iedm19574.2021.9720613
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Abstract

Extensive reliability characterization of advanced DRAM (with and without HK/MG) with EUV process technology is presented. The technology features buried-channel array transistor(BCAT), dual-poly gate core/periphery transistors, 4-metal layers with Cu/Al interconnects, embedded DRAM capacitor, and with 8, 12, 16Gb chips, enabling mobile LPDDRs, Graphic-DDR, HBM, and making up to 128-256GB DIMMs for server applications. FEOL and BEOL WLR reliability demonstrated showed well above 10 yrs, 125°C intrinsic performance and were also validated with long term months of stresses including 1000 hrs ofHTOL and> 6 months package level stresses. DIMMs were also tested with various workloads using server systems, for more than 1 yr, accurately validating the excellent reliability results that showed only few hundred ppms on 32-64GB DIMMs. Early fails can be further optimized by process defect control and test screens, such as burn-in. The DRAM memories are well in volume production.

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Crossref · 10.1109/iedm19574.2021.9720613

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Metadata

Authors
Lee, S., Kim, G.-J., Lee, N.-H., Lee, K., Woo, B., Jin, J., Kim, J., Lee, Y., Kim, H., & Pae, S.
Affiliations
  • Samsung (South Korea) (KR)
  • Memory Division, Samsung Electronics,Hwasung,Republic of Korea
ORCID
Jin, J.
Venue
2021 IEEE International Electron Devices Meeting (IEDM)
Publisher
IEEE
Published
2021-12-11
Pages
6.6.1-6.6.4
ISSN
0163-1918 (ISSN-L)
DOI
10.1109/iedm19574.2021.9720613
OpenAlex
W4226094037
Cited by
22
References
3
Citations by year
2025: 5 · 2024: 9 · 2023: 6 · 2022: 2
FWCI
6.67
Type
conference paper
Language
en
Open access
closed
Licence
Locations
Technical digest - International Electron Devices Meeting/Technical digest (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Integrated Circuits and Semiconductor Failure Analysis
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
Keywords
DRAM reliability, EUV lithography, high temperature operating life, burn-in, long-term reliability, HBM

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