The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system
Open accessAbstract
High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with embedded decoupling capacitors and a high performance integrated thermal management system.
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In the citing paper
“Jet impingement cooling uses high-speed jets from micro-nozzles to target hotspots, achieving high HTC; it is effective for thermally demanding devices such as GaN monolithic microwave integrated circuit (MMIC) power amplifiers [29,52-54].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [54]
Citations
Cites
Pala, V., Brunt, E. V., Cheng, L., O’Loughlin, M. J., Richmond, J., Burk, A. A., Allen, S. T., Grider, D. E., Palmour, J. W., & Scozzie, C. J. (2014) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2014.6953428 · Cited by 160
The next generation of high voltage (10 kV) silicon carbide power modules
Passmore, B., Cole, Z., McGee, B., Wells, M., Stabach, J., Bradshaw, J., Shaw, R., Martin, D., McNutt, T. R., VanBrunt, E., et al. (2016) · IEEE Workshop on Wide Bandgap Power Devices and Applications · doi:10.1109/wipda.2016.7799900 · Cited by 103
Cao, X., Wang, T., Ngo, K. D. T., & Lu, G. (2011) · IEEE Transactions on Components Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2011.2104958 · Cited by 95
Design of a novel, high-density, high-speed 10 kV SiC MOSFET module
DiMarino, C., Johnson, C. M., Mouawad, B., et al. (2017) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2017.8096699 · Cited by 25
Self-citationDesign and development of a high-density, high-speed 10 kV SiC MOSFET module
DiMarino, C., Boroyevich, D., Burgos, R. P., et al. (2017) · European Conference on Power Electronics and Applications · doi:10.23919/epe17ecceeurope.2017.8099109 · Cited by 17
Self-citationHybrid half-bridge package for high voltage application
Mouawad, B., Li, J., Castellazzi, A., et al. (2016) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2016.7520799 · Cited by 10
Self-citationEvaluation of Thermal Resistance Degradation of SiC Power Module Corresponding to Thermal Cycle Test
Kato, F., Takahashi, H., Tanisawa, H., et al. (2017) · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) · doi:10.4071/2380-4491.2017.hiten.223 · Cited by 5
Research works printed but not linked: 1
- graphics, 0, Power tester 1500A-Lifetime testing and failure diagnosis of high-power semiconductors, 04-14 MGC, 1032500
Cited by
Sorted by citations
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
“Jet impingement cooling uses high-speed jets from micro-nozzles to target hotspots, achieving high HTC; it is effective for thermally demanding devices such as GaN monolithic microwave integrated circuit (MMIC) power amplifiers [29,52–54].”
Metadata
- Authors
- Mouawad, B., Skuriat, R., Li, J., Johnson, C. M., & DiMarino, C.
- Affiliations
- University of Nottingham (GB)
- Virginia Tech (US)
- Venue
- 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Publisher
- IEEE
- Published
- 2018-05
- Pages
- 256-259
- ISSN
- 1063-6854 (ISSN-L)
- OpenAlex
- W2809929990
- Cited by
- 31
- References
- 7
- Citations by year
- 2026: 1 · 2025: 2 · 2024: 3 · 2023: 8 · 2022: 5 · 2021: 5 · 2020: 1 · 2019: 5 · 2018: 1
- FWCI
- 4.77
- Type
- conference paper
- Language
- en
- Open access
- green
- doi.org
- Licence
- other-oa
- Locations
- IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs (publishedVersion)
- Repository@Nottingham (University of Nottingham) (acceptedVersion, other-oa)
- Repository@Nottingham (University of Nottingham) (submittedVersion, cc-by)
- Funders
- Engineering and Physical Sciences Research Council (EP/K035304/1)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
- Keywords
- SiC MOSFET, power modules, jet impingement cooling, thermal management, parasitic inductance, thermal resistance, high-density packaging
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