Development of a low-inductance SiC trench MOSFET power module for high-frequency application
Open accessAbstract
This paper deals with the development of a low-inductance multiple-chip power module with state-of-art 1200 V SiC Trench MOSFETs for high-frequency application. Specifically, a phase-leg power module package with integrated decoupling capacitance is fabricated based on P-cell/N-cell concept, and the packaging design is discussed in detail. Dedicated double pulse test is built, and a gate driver with cross-talk suppression function is designed to support the fast switching speed operation of SiC Trench MOSFETs. The parasitic inductance and current density distribution of the power module are simulated and extracted for the purpose of voltage spike limiting. The temperature dependent static and switching characteristics of the developed module are evaluated as well, and the key differences from traditional SiC double-diffused MOS (DMOS) are identified and discussed. Based on the turn-off switching characterization results, a lumped equivalent power-loop parasitic inductance of ~6 nH is achieved for the designed power module.
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Drift region mobility decreases as temperature increases.
“On the other hand, drift region mobility decreases as the temperature increases.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [99]
In III. STATIC CHARACTERIZATION (page not available), the paper says drift-region resistance increases as temperature rises. That is consistent with the claimed decrease in mobility, but our copy does not state or measure drift-region mobility directly. (LLM, conf=0.79)
Experimental — accuracy not yet measuredDrift region resistance increases at elevated temperatures.
“Therefore, drift region resistance increases at elevated temperatures [99].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [99]
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Cites
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- Authors
- Wang, Z. J., Yang, F., Campbell, S., & Chinthavali, M.
- Affiliations
- Oak Ridge National Laboratory (US)
- University of Tennessee at Knoxville (US)
- Venue
- 2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
- Publisher
- IEEE
- Published
- 2018-03
- Pages
- 2834-2841
- ISSN
- 1048-2334 (ISSN-L)
- OpenAlex
- W2799082868
- Cited by
- 16
- References
- 20
- Citations by year
- 2025: 1 · 2024: 2 · 2023: 3 · 2020: 2 · 2019: 5 · 2018: 3
- FWCI
- 3.99
- Type
- conference paper
- Language
- en
- Open access
- green
- www.osti.gov
- Locations
- Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition (publishedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electromagnetic Compatibility and Noise Suppression
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
- Keywords
- SiC trench MOSFET, power module packaging, decoupling capacitance, gate driver, crosstalk reduction, parasitic inductance, temperature dependence, high-frequency power conversion
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