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Ion-implanted complementary MOS transistors in low-voltage circuits
Abstract
Ion-implanted complementary MOS integrated circuits which can operate at supply voltages less than 0.4 V have been fabricated. Their behavior will be described by a new theory of MOST characteristics which is valid near threshold.
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Citations
Cited by
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Dreslinski, R. G., Wieckowski, M., Blaauw, D., Sylvester, D., & Mudge, T. (2010) · Proceedings of the IEEE · doi:10.1109/jproc.2009.2034764 · Cited by 833
Limits on fundamental limits to computation
Markov, I. L. (2014) · Nature · doi:10.1038/nature13570 · Cited by 494
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Meindl, J. D. (1995) · Proceedings of the IEEE · doi:10.1109/5.371970 · Cited by 316
Self-citationEnergy extraction from the biologic battery in the inner ear
Mercier, P. P., Lysaght, A. C., Bandyopadhyay, S., Chandrakasan, A. P., & Stankovic, K. M. (2012) · Nature Biotechnology · doi:10.1038/nbt.2394 · Cited by 217
Metadata
- Authors
- Swanson, R., & Meindl, J.
- Venue
- 1972 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
- Publisher
- IEEE
- Published
- 1972
- Pages
- 192-193
- ISSN
- 0193-6530 (ISSN-L)
- OpenAlex
- W4237030520
- Cited by
- 320
- References
- 0
- FWCI
- 28.95
- Type
- conference paper
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Ion-implanted complementary MOS transistors in low-voltage circuits. https://app.cochat.ai/papers/10.1109/isscc.1972.1155118
- The paper
- Swanson, R., & Meindl, J. (1972). Ion-implanted complementary MOS transistors in low-voltage circuits. 1972 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. https://doi.org/10.1109/isscc.1972.1155118
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
