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Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology

·2005·Journal of Lightwave Technology

Abstract

High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator using complementary metal-oxide-semiconductor processing techniques, including deep ultraviolet lithography, was studied. It is concluded that this technology is capable of commercially manufacturing nanophotonic integrated circuits. The possibilities of photonic wires and photonic-crystal waveguides for photonic integration are compared. It is shown that, with similar fabrication techniques, photonic wires perform at least an order of magnitude better than photonic-crystal waveguides with respect to propagation losses. Measurements indicate propagation losses as low as 0.24 dB/mm for photonic wires but 7.5 dB/mm for photonic-crystal waveguides.

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Metadata

Venue
Journal of Lightwave Technology
Published
2005-01
Volume
23
Issue
1
Pages
401-412
ISSN
  • 0733-8724 (ISSN-L)
  • 1558-2213
OpenAlex
W2147340725
Cited by
861
References
0
FWCI
67.37
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology. https://app.cochat.ai/papers/10.1109/jlt.2004.834471
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Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology. (2005). Journal of Lightwave Technology. https://doi.org/10.1109/jlt.2004.834471

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.