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Silicon waveguide sidewall smoothing by wet chemical oxidation
Abstract
This paper reports a new and more efficient Si waveguide sidewall smoothing process using wet chemical oxidation. Sidewall roughness is a major source of loss and an impediment to realizing high-transmission Si waveguides. The postetch multistepped approach allows for efficient smoothing (in terms of roughness amplitude reduction to material consumption) by continuous oxidation in the fast reaction-limited regime. This method reduces waveguide transmission loss without sacrificing dimensional integrity or thermal budget. In this proof-of-concept work, Si waveguide sidewall loss has been reduced from 9.2 to 1.9 dB/cm.
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Citations
Cited by
Bogaerts, W., De Heyn, P., Van Vaerenbergh, T., De Vos, K., Kumar Selvaraja, S., Claes, T., Dumon, P., Bienstman, P., Van Thourhout, D., & Baets, R. (2012) · Laser & Photonics Reviews · doi:10.1002/lpor.201100017 · Cited by 2,643
High performance, waveguide integrated Ge photodetectors
Ahn, D., Hong, C.-Y., Liu, J., Giziewicz, W., Beals, M., Kimerling, L. C., Michel, J., Chen, J., & Kärtner, F. X. (2007) · Optics Express · doi:10.1364/oe.15.003916 · Cited by 473
Self-citationUltralow-loss compact silicon photonic waveguide spirals and delay lines
Hong, S., Zhang, L., Wang, Y., Zhang, M., Xie, Y., & Dai, D. (2022) · Photonics Research · doi:10.1364/prj.437726 · Cited by 131
Metadata
- Authors
- Sparacin, D. K., Spector, S. J., & Kimerling, L. C.
- Venue
- Journal of Lightwave Technology
- Published
- 2005-08
- Volume
- 23
- Issue
- 8
- Pages
- 2455-2461
- ISSN
- 0733-8724 (ISSN-L)
- OpenAlex
- W2097448833
- Cited by
- 182
- References
- 0
- FWCI
- 12.39
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Silicon waveguide sidewall smoothing by wet chemical oxidation. https://app.cochat.ai/papers/10.1109/jlt.2005.851328
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- Sparacin, D. K., Spector, S. J., & Kimerling, L. C. (2005). Silicon waveguide sidewall smoothing by wet chemical oxidation. Journal of Lightwave Technology. https://doi.org/10.1109/jlt.2005.851328
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