The DOI matches its Crossref record; 28 of the 28 references it cites were found in a registry or an index.
Recent Advances in Telecommunications Avalanche Photodiodes
Abstract
For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is frequently the photodetector of choice owing to its internal gain, which provides a sensitivity margin relative to PIN photodiodes. APDs can achieve 5-10-dB better sensitivity than PINs, provided that the multiplication noise is low and the gain-bandwidth product is sufficiently high. In the past decade, the performance of APDs for optical fiber communication systems has improved as a result of improvements in materials and the development of advanced device structures. This paper presents a brief review of APD fundamentals and describes some of the significant advances
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Cites
Gisin, N., Ribordy, G., Tittel, W., & Zbinden, H. (2002) · Reviews of Modern Physics · doi:10.1103/revmodphys.74.145 · Cited by 8,515
Multiplication noise in uniform avalanche diodes
McIntyre, R. J. (1966) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1966.15651 · Cited by 1,472
Receiver Design for Digital Fiber Optic Communication Systems, I
Personick, S. D. (1973) · Bell System Technical Journal · doi:10.1002/j.1538-7305.1973.tb01993.x · Cited by 708
The distribution of gains in uniformly multiplying avalanche photodiodes: Theory
McIntyre, R. J. (1972) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1972.17485 · Cited by 478
Ionization Rates of Holes and Electrons in Silicon
Lee, C. A., Logan, R. A., Batdorf, R. L., Kleimack, J. J., & Wiegmann, W. (1964) · Physical Review · doi:10.1103/physrev.134.a761 · Cited by 477
Electron and hole ionization rates in epitaxial silicon at high electric fields
Grant, W. N. (1973) · Solid-State Electronics · doi:10.1016/0038-1101(73)90147-0 · Cited by 436
Avalanche-Photodiode Frequency Response
Emmons, R. B. (1967) · Journal of Applied Physics · doi:10.1063/1.1710199 · Cited by 345
Evolution and prospects for single-photon avalanche diodes and quenching circuits
Cova, S., Ghioni, M., Lotito, A., Rech, I., & Zappa, F. (2004) · Journal of Modern Optics · doi:10.1080/09500340408235272 · Cited by 322
Recent Advances in Avalanche Photodiodes
Campbell, J. C., Demiguel, S., Ma, F., Beck, A. L., Guo, X., Wang, S., Zheng, X. G., Li, X., Beck, J. D., Kinch, M. A., et al. (2004) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/jstqe.2004.833971 · Cited by 193
Self-citationImpact-ionization and noise characteristics of thin III-V avalanche photodiodes
Saleh, M. A., Hayat, M. M., Sotirelis, P., Holmes, A. L., Campbell, J. C., Saleh, B. E. A., & Teich, M. C. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.974696 · Cited by 158
Self-citation
Cited by
High-speed Si-Ge avalanche photodiodes
Wang, B., & Mu, J. (2022) · PhotoniX · doi:10.1186/s43074-022-00052-6 · Cited by 86
Metadata
- Authors
- Campbell, J. C.
- Venue
- Journal of Lightwave Technology
- Published
- 2007-01
- Volume
- 25
- Issue
- 1
- Pages
- 109-121
- ISSN
- 0733-8724 (ISSN-L)
- OpenAlex
- W2102596348
- Cited by
- 264
- References
- 28
- FWCI
- 9.45
- Type
- journal article
- Language
- en
- Open access
- closed
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