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Cited by 223

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Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography

Selvaraja, S.K., Jaenen, P., Bogaerts, W., Van Thourhout, D., Dumon, P., Baets, R.·2009·Journal of Lightwave Technology

Abstract

High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5-mum radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.

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Metadata

Authors
Selvaraja, S. K., Jaenen, P., Bogaerts, W., Van Thourhout, D., Dumon, P., & Baets, R.
Venue
Journal of Lightwave Technology
Published
2009-09
Volume
27
Issue
18
Pages
4076-4083
ISSN
  • 0733-8724 (ISSN-L)
  • 1558-2213
OpenAlex
W2112816903
Cited by
223
References
1
FWCI
23.23
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography. https://app.cochat.ai/papers/10.1109/jlt.2009.2022282
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Selvaraja, S. K., Jaenen, P., Bogaerts, W., Van Thourhout, D., Dumon, P., & Baets, R. (2009). Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography. Journal of Lightwave Technology. https://doi.org/10.1109/jlt.2009.2022282

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