The DOI matches its Crossref record; 34 of the 34 references it cites were found in a registry or an index.
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Abstract
Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal–oxide–semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Messiah, A. (1961) · Cited by 16,012
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Physics of Semiconductor Devices
(2002) · Kluwer Academic Publishers eBooks · doi:10.1007/b117561 · Cited by 13,963
Electronic Confinement and Coherence in Patterned Epitaxial Graphene
Berger, C., Song, Z., Li, X., Wu, X., Brown, N., Naud, C., Mayou, D., Li, T., Hass, J., Marchenkov, A. N., et al. (2006) · Science · doi:10.1126/science.1125925 · Cited by 5,535
Spatial Variation of Currents and Fields Due to Localized Scatterers in Metallic Conduction
Landauer, R. (1957) · IBM Journal of Research and Development · doi:10.1147/rd.13.0223 · Cited by 3,459
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Salahuddin, S., & Datta, S. (2008) · Nano Letters · doi:10.1021/nl071804g · Cited by 2,164
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
Choi, W. Y., Park, B.-G., Lee, J. D., & Liu, T.-J. K. (2007) · IEEE Electron Device Letters · doi:10.1109/led.2007.901273 · Cited by 1,923
Double-Gate Tunnel FET With High- Gate Dielectric
Boucart, K., & Ionescu, A. M. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.899389 · Cited by 1,659
New Phenomenon in Narrow Germaniump−nJunctions
Esaki, L. (1958) · Physical Review · doi:10.1103/physrev.109.603 · Cited by 1,558
A theory of the electrical breakdown of solid dielectrics
Zener, C. (1934) · Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character · doi:10.1098/rspa.1934.0116 · Cited by 1,425
Cited by
Electronics based on two-dimensional materials
Fiori, G., Bonaccorso, F., Iannaccone, G., Palacios, T., Neumaier, D., Seabaugh, A., Banerjee, S. K., & Colombo, L. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.207 · Cited by 3,176
Self-citationTwo-dimensional materials for next-generation computing technologies
Liu, C., Chen, H., Wang, S., Liu, Q., Jiang, Y.-G., Zhang, D. W., Liu, M., & Zhou, P. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0724-3 · Cited by 1,045
Liu, C., Yan, X., Song, X., Ding, S., Zhang, D. W., & Zhou, P. (2018) · Nature Nanotechnology · doi:10.1038/s41565-018-0102-6 · Cited by 417
Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs
Sajjad, R. N., Chern, W., Hoyt, J. L., & Antoniadis, D. A. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2603468 · Cited by 141
Cherik, I. C., Mohammadi, S., & Orouji, A. A. (2022) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3124984 · Cited by 23
Metadata
- Authors
- Seabaugh, A. C., & Zhang, Q.
- Venue
- Proceedings of the IEEE
- Published
- 2010-12
- Volume
- 98
- Issue
- 12
- Pages
- 2095-2110
- ISSN
- 0018-9219 (ISSN-L)
- 1558-2256
- OpenAlex
- W2009624223
- Cited by
- 1,635
- References
- 34
- FWCI
- 36.38
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Low-Voltage Tunnel Transistors for Beyond CMOS Logic. https://app.cochat.ai/papers/10.1109/jproc.2010.2070470
- The paper
- Seabaugh, A. C., & Zhang, Q. (2010). Low-Voltage Tunnel Transistors for Beyond CMOS Logic. Proceedings of the IEEE. https://doi.org/10.1109/jproc.2010.2070470
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
