The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
Abstract
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2 and 70 nm, respectively. However, theon/offcurrent ratio of the TFET was still lower than that of the MOSFET. In order to increase theoncurrent further, the following approaches can be considered: reduction of effective gate oxide thickness, increase in the steepness of the gradient of the source to channel doping profile, and utilization of a lower bandgap channel material.
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Citations
Cites
Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
Appenzeller, J., Lin, Y.-M., Knoch, J., & Avouris, P. (2004) · Physical Review Letters · doi:10.1103/physrevlett.93.196805 · Cited by 880
Low-subthreshold-swing tunnel transistors
Zhang, Q., Zhao, W., & Seabaugh, A. (2006) · IEEE Electron Device Letters · doi:10.1109/led.2006.871855 · Cited by 649
MOSFET Models for VLSI Circuit Simulation
Arora, N. (1993) · Computational microelectronics · doi:10.1007/978-3-7091-9247-4 · Cited by 563
MOSFET models for VLSI circuit simulation
Arora, N. (1995) · Microelectronics Journal · doi:10.1016/0026-2692(95)90019-5 · Cited by 187
100-nm n-/p-channel I-MOS using a novel self-aligned structure
Choi, W. Y., Song, J. Y., Lee, J. D., Park, Y. J., & Park, B. (2005) · IEEE Electron Device Letters · doi:10.1109/led.2005.844695 · Cited by 78
Self-citation
Cited by
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Seabaugh, A. C., & Zhang, Q. (2010) · Proceedings of the IEEE · doi:10.1109/jproc.2010.2070470 · Cited by 1,635
Tunnel Field-Effect Transistors: Prospects and Challenges
Avci, U. E., Morris, D. H., & Young, I. A. (2015) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2015.2390591 · Cited by 527
Narang, R., Reddy, K. V. S., Saxena, M., Gupta, R. S., & Gupta, M. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2208115 · Cited by 308
Wangkheirakpam, V. D., Bhowmick, B., & Pukhrambam, P. D. (2020) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2020.2969206 · Cited by 199
Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs
Sajjad, R. N., Chern, W., Hoyt, J. L., & Antoniadis, D. A. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2603468 · Cited by 141
Metadata
- Authors
- Choi, W. Y., Park, B.-G., Lee, J. D., & Liu, T.-J. K.
- Venue
- IEEE Electron Device Letters
- Published
- 2007-08
- Volume
- 28
- Issue
- 8
- Pages
- 743-745
- ISSN
- 0741-3106 (ISSN-L)
- OpenAlex
- W2110584581
- Cited by
- 1,923
- References
- 5
- FWCI
- 38.12
- Type
- journal article
- Language
- en
- Open access
- closed
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- Choi, W. Y., Park, B.-G., Lee, J. D., & Liu, T.-J. K. (2007). Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec. IEEE Electron Device Letters. https://doi.org/10.1109/led.2007.901273
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