The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Graphene Transistors: Status, Prospects, and Problems
Abstract
Graphene is a relatively new material with unique properties that holds promise for electronic applications. Since 2004, when the first graphene samples were intentionally fabricated, the worldwide research activities on graphene have literally exploded. Apart from physicists, also device engineers became interested in the new material and soon the prospects of graphene in electronics have been considered. For the most part, the early discussions on the potential of graphene had a prevailing positive mood, mainly based on the high carrier mobilities observed in this material. This has repeatedly led to very optimistic assessments of the potential of graphene transistors and to an underestimation of their problems. In this paper, we discuss the properties of graphene relevant for electronic applications, examine its advantages and problems, and summarize the state of the art of graphene transistors.
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Citations
Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Superior Thermal Conductivity of Single-Layer Graphene
Balandin, A. A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., & Lau, C. N. (2008) · Nano Letters · doi:10.1021/nl0731872 · Cited by 13,823
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033 · cited 2×
“Moreover, bandstructure calculations for GNRs and bilayer graphene reveal a high degree of symmetry of the conduction and valence bands pointing to similar effective electron and hole masses [51], [59].”
Background
Cited by
Electronic Structure of Atomically Precise Graphene Nanoribbons
Ruffieux, P., Cai, J., Plumb, N. C., Patthey, L., Prezzi, D., Ferretti, A., Molinari, E., Feng, X., Müllen, K., Pignedoli, C. A., et al. (2012) · ACS Nano · doi:10.1021/nn3021376 · Cited by 494
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Metadata
- Authors
- Schwierz, F.
- Venue
- Proceedings of the IEEE
- Published
- 2013-07
- Volume
- 101
- Issue
- 7
- Pages
- 1567-1584
- ISSN
- 0018-9219 (ISSN-L)
- 1558-2256
- OpenAlex
- W2074972763
- Cited by
- 517
- References
- 7
- FWCI
- 23.24
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
