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Static-noise margin analysis of MOS SRAM cells
Abstract
The stability of both resistor-load (R-load) and full-CMOS SRAM cells is investigated analytically as well as by simulation. Explicit analytic expressions for the static-noise margin (SNM) as a function of device parameters and supply voltage are derived. The expressions are useful in predicting the effect of parameter changes on the stability as well as in optimizing the design of SRAM cells. An easy-to-use SNM simulation method is presented, the results of which are in good agreement with the results predicted by the analytic SNM expressions. It is further concluded that full-CMOS cells are much more stable than R-local cells at a low supply voltage.
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Cited by
Kuhn, K. J., Giles, M. D., Becher, D., Kolar, P., Kornfeld, A., Kotlyar, R., Ma, S. T., Maheshwari, A., & Mudanai, S. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2121913 · Cited by 373
Ultralow-Power Electronics for Biomedical Applications
Chandrakasan, A. P., Verma, N., & Daly, D. C. (2008) · Annual Review of Biomedical Engineering · doi:10.1146/annurev.bioeng.10.061807.160547 · Cited by 285
Metadata
- Authors
- Seevinck, E., List, F. J., & Lohstroh, J.
- Venue
- IEEE Journal of Solid-State Circuits
- Published
- 1987-10
- Volume
- 22
- Issue
- 5
- Pages
- 748-754
- ISSN
- 0018-9200 (ISSN-L)
- OpenAlex
- W2002612140
- Cited by
- 1,436
- References
- 0
- FWCI
- 7.67
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Static-noise margin analysis of MOS SRAM cells. https://app.cochat.ai/papers/10.1109/jssc.1987.1052809
- The paper
- Seevinck, E., List, F. J., & Lohstroh, J. (1987). Static-noise margin analysis of MOS SRAM cells. IEEE Journal of Solid-State Circuits. https://doi.org/10.1109/jssc.1987.1052809
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