The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
Process Technology Variation
Abstract
Moore's law technology scaling has improved performance by five orders of magnitude in the last four decades. As advanced technologies continue the pursuit of Moore's law, a variety of challenges will need to be overcome. One of these challenges is the management of process variation. This paper discusses the importance of process variation in modern transistor technology, reviews front-end variation sources, presents device and circuit variation measurement techniques, including circuit and memory data from the 32-nm node, and compares recent intrinsic transistor variation performance from the literature.
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Citations
Cites
Matching properties of MOS transistors
Pelgrom, M. J. M., Duinmaijer, A. C. J., & Welbers, A. P. G. (1989) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.1989.572629 · Cited by 3,319
Static-noise margin analysis of MOS SRAM cells
Seevinck, E., List, F. J., & Lohstroh, J. (1987) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.1987.1052809 · Cited by 1,436
Borkar, S. (2005) · IEEE Micro · doi:10.1109/mm.2005.110 · Cited by 1,320
A review of recent MOSFET threshold voltage extraction methods
Ortiz-Conde, A., Garcı́a Sánchez, F. J., Liou, J. J., Cerdeira, A., Estrada, M., & Yue, Y. (2002) · Microelectronics Reliability · doi:10.1016/s0026-2714(02)00027-6 · Cited by 999
Problems related to p-n junctions in silicon
Shockley, W. (1961) · Solid-State Electronics · doi:10.1016/0038-1101(61)90054-5 · Cited by 923
Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
Lim, H.-K., & Fossum, J. G. (1983) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1983.21282 · Cited by 695
Asenov, A. (1998) · IEEE Transactions on Electron Devices · doi:10.1109/16.735728 · Cited by 641
Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness
Asenov, A., Kaya, S., & Brown, A. R. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2003.813457 · Cited by 591
On the gate-stack origin threshold voltage variability in scaled FinFETs and multi-FinFETs
Liu, Y., Endo, K., O’uchi, S., et al. (2010) · Symposium on VLSI Technology · doi:10.1109/vlsit.2010.5556187 · Cited by 35
Zhuge, J., Wang, R., Huang, R., Zou, J., Huang, X., Kim, D.-W., Park, D., Zhang, X., & Wang, Y. (2009) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2009.5424421 · Cited by 24
Cited by
Qubits made by advanced semiconductor manufacturing
Zwerver, A. M. J., Krähenmann, T., Watson, T. F., Lampert, L., George, H. C., Pillarisetty, R., Bojarski, S. A., Amin, P., Amitonov, S. V., Boter, J. M., et al. (2022) · Nature Electronics · doi:10.1038/s41928-022-00727-9 · Cited by 364
Self-citationProbing single electrons across 300-mm spin qubit wafers
Neyens, S., Zietz, O. K., Watson, T. F., Luthi, F., Nethwewala, A., George, H. C., Henry, E., Islam, M., Wagner, A. J., Borjans, F., et al. (2024) · Nature · doi:10.1038/s41586-024-07275-6 · Cited by 178
“The scaling of classical chips according to Moore’s Law has depended on significant advancements in device variation ( σV T ) [22] as well as performance ( I on /I off , gate delay).”
MethodInfluentialSelf-citation
Metadata
- Authors
- Kuhn, K. J., Giles, M. D., Becher, D., Kolar, P., Kornfeld, A., Kotlyar, R., Ma, S. T., Maheshwari, A., & Mudanai, S.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2011-08
- Volume
- 58
- Issue
- 8
- Pages
- 2197-2208
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2096581954
- Cited by
- 373
- References
- 10
- FWCI
- 19.61
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kuhn, K. J., Giles, M. D., Becher, D., Kolar, P., Kornfeld, A., Kotlyar, R., Ma, S. T., Maheshwari, A., & Mudanai, S. (2011). Process Technology Variation. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2011.2121913
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
