The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
Abstract
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
A reliable approach to charge-pumping measurements in MOS transistors
Groeseneken, G., Maes, H. E., Beltran, N., & De Keersmaecker, R. F. (1984) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1984.21472 · Cited by 1,355
Self-citationOn the geometric component of charge-pumping current in MOSFETs
den Bosch, G. V., Groeseneken, G., & Maes, H. E. (1993) · IEEE Electron Device Letters · doi:10.1109/55.215126 · Cited by 87
Self-citation
Cited by
Review on high-k dielectrics reliability issues
Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., & Ghibaudo, G. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.845236 · Cited by 533
Metadata
- Authors
- Kerber, A., Cartier, E., Pantisano, L., Degraeve, R., Kauerauf, T., Kim, Y., Hou, A., Groeseneken, G., Maes, H. E., & Schwalke, U.
- Venue
- IEEE Electron Device Letters
- Published
- 2003-02
- Volume
- 24
- Issue
- 2
- Pages
- 87-89
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W88929070
- Cited by
- 362
- References
- 2
- FWCI
- 39.55
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics. https://app.cochat.ai/papers/10.1109/led.2003.808844
- The paper
- Kerber, A., Cartier, E., Pantisano, L., Degraeve, R., Kauerauf, T., Kim, Y., Hou, A., Groeseneken, G., Maes, H. E., & Schwalke, U. (2003). Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics. IEEE Electron Device Letters. https://doi.org/10.1109/led.2003.808844
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
