The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
A Graphene Field-Effect Device
Open accessAbstract
In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs
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Citations
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Cited by
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
“There is a rapid progress in the measurement of trans-port properties of graphene ribbons with additional topgates that play the role of tunable potential barriers(Han et al., 2007; Huard et al., 2007; Lemme et al., 2007;Özyilmaz et al., 2007; Williams et al., 2007).”
BackgroundElectronic Transport Properties of Individual Chemically Reduced Graphene Oxide Sheets
Gómez-Navarro, C., Weitz, R. T., Bittner, A. M., Scolari, M., Mews, A., Burghard, M., & Kern, K. (2007) · Nano Letters · doi:10.1021/nl072090c · Cited by 2,389
Quantum interference and Klein tunnelling in graphene heterojunctions
Young, A. F., & Kim, P. (2009) · Nature Physics · doi:10.1038/nphys1198 · Cited by 1,183
Carbide‐Derived Carbons – From Porous Networks to Nanotubes and Graphene
Presser, V., Heon, M., & Gogotsi, Y. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201002094 · Cited by 678
Etching of Graphene Devices with a Helium Ion Beam
Lemme, M. C., Bell, D. C., Williams, J. R., Stern, L. A., Baugher, B. W. H., Jarillo-Herrero, P., & Marcus, C. M. (2009) · ACS Nano · doi:10.1021/nn900744z · Cited by 296
Self-citation
Metadata
- Authors
- Lemme, M. C., Echtermeyer, T. J., Baus, M., & Kurz, H.
- Venue
- IEEE Electron Device Letters
- Published
- 2007-04
- Volume
- 28
- Issue
- 4
- Pages
- 282-284
- ISSN
- 0741-3106 (ISSN-L)
- OpenAlex
- W2121990892
- Cited by
- 1,073
- References
- 2
- FWCI
- 42.42
- Type
- journal article
- Language
- en
- Open access
- green
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- Lemme, M. C., Echtermeyer, T. J., Baus, M., & Kurz, H. (2007). A Graphene Field-Effect Device. IEEE Electron Device Letters. https://doi.org/10.1109/led.2007.891668
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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