The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion
Abstract
Existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque-induced magnetization switching and magnetic-domain-wall motion. Our examples show that memristive effects are quite universal for spin-torque spintronic device at the time scale that explicitly involves the interactions between magnetization dynamics and electronic charge transport. We also proved that the spintronic device can be designed to explore and memorize the continuum state of current and voltage based on interactions of electron and spin transport.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268 · cited 1×
“Although memristor was reasoned as a fourth fundamental circuit element with many valuable circuit properties for the sake of logic completeness of circuit theory [3], [4], it took 40 years to demonstrate a practical memristor device in nanoscale.”
BackgroundMemristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604 · cited 1×
“Although memristor was reasoned as a fourth fundamental circuit element with many valuable circuit properties for the sake of logic completeness of circuit theory [3], [4], it took 40 years to demonstrate a practical memristor device in nanoscale.”
BackgroundTour, J. M., & He, T. (2008) · Nature · doi:10.1038/453042a · Cited by 504
Cited by
Memory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823
A comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies
Kvatinsky, S., Satat, G., Wald, N., Friedman, E. G., Kolodny, A., & Weiser, U. C. (2014) · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · doi:10.1109/tvlsi.2013.2282132 · Cited by 677
Locatelli, N., Cros, V., & Grollier, J. (2014) · Nature Materials · doi:10.1038/nmat3823 · Cited by 649
Practical Approach to Programmable Analog Circuits With Memristors
Pershin, Y. V., & Di Ventra, M. (2010) · IEEE Transactions on Circuits and Systems I: Regular Papers · doi:10.1109/tcsi.2009.2038539 · Cited by 639
Metadata
- Authors
- Wang, X., Chen, Y., Xi, H., Li, H., & Dimitrov, D.
- Venue
- IEEE Electron Device Letters
- Published
- 2009-03
- Volume
- 30
- Issue
- 3
- Pages
- 294-297
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2103531629
- Cited by
- 378
- References
- 4
- FWCI
- 15.61
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion. https://app.cochat.ai/papers/10.1109/led.2008.2012270
- The paper
- Wang, X., Chen, Y., Xi, H., Li, H., & Dimitrov, D. (2009). Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion. IEEE Electron Device Letters. https://doi.org/10.1109/led.2008.2012270
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
