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Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
Abstract
A unified model is proposed to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory devices using the concept of electron hopping transport along filamentary conducting paths in dielectric layer. The transport calculation shows that a low-electron-occupied region along the conductive filament (CF) is formed when a critical electric field is applied. The oxygen vacancies in this region are recombined with oxygen ions, resulting in rupture of the CFs. The proposed mechanism was verified by experiments and theoretical calculations. In this physical model, the observed resistive switching behaviors in the oxide-based systems can be quantified and predicted.
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Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Cited by
Guan, X., Yu, S., & Wong, H.-S. P. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2184545 · Cited by 355
Fang, R., Gonzalez Velo, Y., Chen, W., Holbert, K. E., Kozicki, M. N., Barnaby, H., & Yu, S. (2014) · Applied Physics Letters · doi:10.1063/1.4875748 · Cited by 74
A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems
Liao, Y., Gao, B., Xu, F., Yao, P., Chen, J., Zhang, W., Tang, J., Wu, H., & Qian, H. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2975314 · Cited by 53
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Metadata
- Authors
- Gao, B., Sun, B., Zhang, H., Liu, L., Liu, X., Han, R., Kang, J., & Yu, B.
- Venue
- IEEE Electron Device Letters
- Published
- 2009-12
- Volume
- 30
- Issue
- 12
- Pages
- 1326-1328
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2138057160
- Cited by
- 178
- References
- 1
- FWCI
- 16.10
- Type
- journal article
- Language
- en
- Open access
- closed
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- Gao, B., Sun, B., Zhang, H., Liu, L., Liu, X., Han, R., Kang, J., & Yu, B. (2009). Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory. IEEE Electron Device Letters. https://doi.org/10.1109/led.2009.2032308
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