Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory
Abstract
The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO2) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.
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The new mechanism based on ionic/atomic motion indicates that the TRNG may be less vulnerable to environmental variations such as radiation relative to other electron-based TRNGs.
“The new mechanism based on ionic/atomic motion indicates that our TRNG may be less vulnerable to environmental variations such as radiation relative to other electron-based TRNGs36.”
From A novel true random number generator based on a stochastic diffusive memristor (2017) · cites this paper as [36]
Our diffusive memristor TRNG (like all other memristive-switching-based TRNG) could be more resistant to harsh environments than other electron-based TRNGs.
“which suggests that our diffusive memristor TRNG (like all other memristive-switching-based TRNG) could be more resistant to harsh environments than other electron-based TRNGs36.”
From A novel true random number generator based on a stochastic diffusive memristor (2017) · cites this paper as [36]
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Pulsed-laser testing for single event effects in a stand-alone resistive random access memory
Xi, K., Feng, Z., Li, J., Ji, L., Cong, F., Liu, J., Ming, L., & Jinshun, B. (2017) · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · doi:10.1109/ipfa.2017.8060178 · Cited by 3 · see citing works
Castellani-Coulié, K., Aziza, H., & Rahajandraibe, W. (2023) · Journal of Electronic Testing · doi:10.1007/s10836-023-06068-5 · Cited by 3 · see citing works
Improved performance of flexible citrus resistive memory device through air plasma
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Conductive Filament Variation of RRAM and Its Impact on Single Event Upset
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Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack
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Self-citationTotal ionizing dose effects on Ag/ amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memory
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Total Ionizing Dose Effects on HfO2-based Memristors
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Defect Induced Aging and Breakdown in High-k Dielectrics
Fang, R. (2018)
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Investigation of Single Event Effects in a Resistive RAM memory array by SPICE level simulation
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SiO2-Based Conductive-Bridging Random Access Memory
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Self-citationThe effect of external stimuli on the performance of memristive oxides
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Radiation-Enhanced Multi-Level Cell Behavior in TaOx/NiO-based Resistive Random Access Memory
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- Authors
- Fang, R., Gonzalez Velo, Y., Chen, W., Holbert, K. E., Kozicki, M. N., Barnaby, H., & Yu, S.
- Affiliations
- Arizona State University (US)
- Arizona State University 2 School of Electrical, Computer, and Energy Engineering, , Tempe, Arizona 85287, USA
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2014-05-05
- Volume
- 104
- Issue
- 18
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1985772533
- Cited by
- 74
- References
- 26
- Citations by year
- 2026: 1 · 2025: 4 · 2024: 5 · 2023: 4 · 2022: 5 · 2021: 9 · 2020: 7 · 2019: 5 · 2018: 13 · 2017: 8 · 2016: 3 · 2015: 7 · 2014: 3
- FWCI
- 3.72
- Type
- journal article
- Language
- en
- Update notices
- correction (2014-05-30)
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Keywords
- total ionizing dose, gamma irradiation, filament stability, switching characteristics
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