The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions
Abstract
In this letter, the resistive switching properties of a$\hbox{ZrO}_{2}$-based memory film with implanted Ti ions are investigated. The testing results demonstrate that doping Ti in$\hbox{ZrO}_{2}$can remove the electroforming process and reduce the variations of switching parameters such as Set voltage and resistance inoffstate. Furthermore, the Ti-doped$ \hbox{ZrO}_{2}$resistive switching memory also exhibits high device yield (nearly 100%), low operating voltage, fast speed, large on/off ratio$( ≫ \hbox{10}^{4})$, and long retention time$( ≫ \hbox{10}^{7}\ \hbox{s})$. The formation and rupture of conducting filaments are suggested to be responsible for the resistive switching phenomenon. The doped Ti impurities can improve the formation of conducting filaments and switching behaviors.
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Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
Self-citationElectrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Choi, S., Tan, S. H., Li, Z., Kim, Y., Choi, C., Chen, P.-Y., Yeon, H., Yu, S., & Kim, J. (2018) · Nature Materials · doi:10.1038/s41563-017-0001-5 · Cited by 690
Metadata
- Authors
- Liu, Q., Long, S., Wang, W., Zuo, Q., Zhang, S., Chen, J., & Liu, M.
- Venue
- IEEE Electron Device Letters
- Published
- 2009-12
- Volume
- 30
- Issue
- 12
- Pages
- 1335-1337
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W1969466968
- Cited by
- 217
- References
- 2
- FWCI
- 10.82
- Type
- journal article
- Language
- en
- Open access
- closed
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- Liu, Q., Long, S., Wang, W., Zuo, Q., Zhang, S., Chen, J., & Liu, M. (2009). Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions. IEEE Electron Device Letters. https://doi.org/10.1109/led.2009.2032566
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