The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current
Abstract
Al2O3-based RRAM devices were fabricated using atomic layer deposition under 100°C and 300°C deposition temperatures, respectively, and their resistance-switching behaviors were investigated. Both devices show unipolar switching if the top electrode (TE) is made of Ti/Al, whereas the bipolar phenomenon is observed when TE is pure aluminum. Devices fabricated at higher temperature give better uniformity and higher resistance ratio. Ultralow RESET current (~1 μA) was obtained, together with adequate voltage margin.
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Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Self-citationYu, S., Wu, Y., Jeyasingh, R., Kuzum, D., & Wong, H.-S. P. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2147791 · Cited by 805
Self-citationThe Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Yu, S., Wu, Y., & Wong, H.-S. P. (2011) · Applied Physics Letters · doi:10.1063/1.3564883 · Cited by 288
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Metadata
- Authors
- Wu, Y., Lee, B., & Wong, H.-S. P.
- Venue
- IEEE Electron Device Letters
- Published
- 2010-12
- Volume
- 31
- Issue
- 12
- Pages
- 1449-1451
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2119495176
- Cited by
- 161
- References
- 1
- FWCI
- 13.46
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current. https://app.cochat.ai/papers/10.1109/led.2010.2074177
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- Wu, Y., Lee, B., & Wong, H.-S. P. (2010). $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current. IEEE Electron Device Letters. https://doi.org/10.1109/led.2010.2074177
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