The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
Abstract
HfO x / AlO x bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.
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Citations
Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Electronic Processes in Ionic Crystals
Mott, N. F., & Gurney, R. W. (1940) · CERN Document Server (European Organization for Nuclear Research) · Cited by 2,487
Resistive Random Access Memory (ReRAM) Based on Metal Oxides
Akinaga, H., & Shima, H. (2010) · Proceedings of the IEEE · doi:10.1109/jproc.2010.2070830 · Cited by 1,037
Russo, U., Ielmini, D., Cagli, C., & Lacaita, A. L. (2009) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.2010584 · Cited by 389
Xu, N., Liu, L., Sun, X., Liu, X., Han, D., Wang, Y., Han, R., Kang, J., & Yu, B. (2008) · Applied Physics Letters · doi:10.1063/1.2945278 · Cited by 371
Schindler, C., Staikov, G., & Waser, R. (2009) · Applied Physics Letters · doi:10.1063/1.3077310 · Cited by 307
Forming and switching mechanisms of a cation-migration-based oxide resistive memory
Tsuruoka, T., Terabe, K., Hasegawa, T., & Aono, M. (2010) · Nanotechnology · doi:10.1088/0957-4484/21/42/425205 · Cited by 296
A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
Yu, S., & Wong, H.-S. P. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2010.2078794 · Cited by 204
Self-citationWu, Y., Lee, B., & Wong, H.-S. P. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2010.2074177 · Cited by 161
Self-citationYu, S., Gao, B., Dai, H., Sun, B., Liu, L., Liu, X., Han, R., Kang, J., & Yu, B. (2009) · Electrochemical and Solid-State Letters · doi:10.1149/1.3267050 · Cited by 138
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Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Self-citationPipeLayer: A Pipelined ReRAM-Based Accelerator for Deep Learning
Song, L., Qian, X., Li, H., & Chen, Y. (2017) · 2017 IEEE International Symposium on High Performance Computer Architecture (HPCA) · doi:10.1109/hpca.2017.55 · Cited by 833
Yu, S., Wu, Y., Jeyasingh, R., Kuzum, D., & Wong, H.-S. P. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2147791 · Cited by 805
Self-citationHigh precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
Alibart, F., Gao, L., Hoskins, B. D., & Strukov, D. B. (2012) · Nanotechnology · doi:10.1088/0957-4484/23/7/075201 · Cited by 557
Brain-inspired computing with memristors: Challenges in devices, circuits, and systems
Zhang, Y., Wang, Z., Zhu, J., Yang, Y., Rao, M., Song, W., Zhuo, Y., Zhang, X., Cui, M., Shen, L., et al. (2020) · Applied Physics Reviews · doi:10.1063/1.5124027 · Cited by 384
Metadata
- Authors
- Yu, S., Wu, Y., & Wong, H.-S. P.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2011-03-07
- Volume
- 98
- Issue
- 10
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2035054741
- Cited by
- 288
- References
- 13
- FWCI
- 12.70
- Type
- journal article
- Language
- en
- Open access
- closed
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