The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
Abstract
The reset mechanism of metal oxide RRAM has been attributed to oxygen ion migration assisted by Joule heating. Here, we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanisms. Numerical simulation results reveal that the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. This model combines the previous thermal dissolution model and ion migration model and thus can explain many experimental observations such as the electrode-material-dependent switching polarity and the voltage-time dilemma between fast switching and long retention.
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Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Self-citationYu, S., Wu, Y., Jeyasingh, R., Kuzum, D., & Wong, H.-S. P. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2147791 · Cited by 805
Self-citationEmerging Memory Technologies: Recent Trends and Prospects
Yu, S., & Chen, P.-Y. (2016) · IEEE Solid-State Circuits Magazine · doi:10.1109/mssc.2016.2546199 · Cited by 555
Self-citationDynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
Chen, J.-Y., Hsin, C.-L., Huang, C.-W., Chiu, C.-H., Huang, Y.-T., Lin, S.-J., Wu, W.-W., & Chen, L.-J. (2013) · Nano Letters · doi:10.1021/nl4015638 · Cited by 388
Guan, X., Yu, S., & Wong, H.-S. P. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2184545 · Cited by 355
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Metadata
- Authors
- Yu, S., & Wong, H.-S. P.
- Venue
- IEEE Electron Device Letters
- Published
- 2010-12
- Volume
- 31
- Issue
- 12
- Pages
- 1455-1457
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W1980284740
- Cited by
- 204
- References
- 1
- FWCI
- 16.45
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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