The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations
Abstract
A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfOx-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.
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Citations
Cites
Device and SPICE modeling of RRAM devices
Sheridan, P., Kim, K.-H., Gaba, S., Chang, T., Chen, L., & Lu, W. (2011) · Nanoscale · doi:10.1039/c1nr10557d · Cited by 98
Cited by
Hardware implementation of memristor-based artificial neural networks
Aguirre, F., Sebastian, A., Le Gallo, M., Song, W., Wang, T., Yang, J. J., Lu, W., Chang, M.-F., Ielmini, D., Yang, Y., et al. (2024) · Nature Communications · doi:10.1038/s41467-024-45670-9 · Cited by 564
“Note that for other memristive models the state variable would be calculated following a different equation (for instance in the Stanford model 270 ).”
Understanding memristive switching via in situ characterization and device modeling
Sun, W., Gao, B., Chi, M., Xia, Q., Yang, J. J., Qian, H., & Wu, H. (2019) · Nature Communications · doi:10.1038/s41467-019-11411-6 · Cited by 482
Yu, S., Gao, B., Fang, Z., Yu, H., Kang, J., & Wong, H.-S. P. (2012) · 2012 International Electron Devices Meeting · doi:10.1109/iedm.2012.6479018 · Cited by 213
Self-citationChakraborty, I., Ali, M., Ankit, A., Jain, S., Roy, S., Sridharan, S., Agrawal, A., Raghunathan, A., & Roy, K. (2020) · Proceedings of the IEEE · doi:10.1109/jproc.2020.3003007 · Cited by 140
Comprehensive Compact Phenomenological Modeling of Integrated Metal-Oxide Memristors
Nili, H., Vincent, A. F., Prezesio, M., Mahmoodi, M. R., Kataeva, I., & Strukov, D. B. (2020) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2020.2982128 · Cited by 38
Metadata
- Authors
- Guan, X., Yu, S., & Wong, H.-S. P.
- Venue
- IEEE Electron Device Letters
- Published
- 2012-10
- Volume
- 33
- Issue
- 10
- Pages
- 1405-1407
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W1965288361
- Cited by
- 282
- References
- 1
- FWCI
- 8.95
- Type
- journal article
- Language
- en
- Open access
- closed
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- Guan, X., Yu, S., & Wong, H.-S. P. (2012). A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations. IEEE Electron Device Letters. https://doi.org/10.1109/led.2012.2210856
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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