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The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
Open accessAbstract
Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high ON-current of 144 mA/mm and hole mobility of 95.6 cm2/V·s. We deposit Al2O3by atomic layer deposition (ALD) and study the effects of dielectric capping. We observe that the polarity of the transistors alternated from p-type to ambipolar with Al2O3grown on the top. We attribute this transition to the changes for the effective Schottky barrier heights for both electrons and holes at the metal contact edges, which is originated from fixed charges in the ALD dielectric.
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Cited by
Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
Youngblood, N., Chen, C., Koester, S. J., & Li, M. (2015) · Nature Photonics · doi:10.1038/nphoton.2015.23 · Cited by 953
Recent progress in 2D group-VA semiconductors: from theory to experiment
Zhang, S., Guo, S., Chen, Z., Wang, Y., Gao, H., Gómez-Herrero, J., Ares, P., Zamora, F., Zhu, Z., & Zeng, H. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00125h · Cited by 850
Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices
Pang, J., Bachmatiuk, A., Yin, Y., Trzebicka, B., Zhao, L., Fu, L., Mendes, R. G., Gemming, T., Liu, Z., & Rummeli, M. H. (2018) · Advanced Energy Materials · doi:10.1002/aenm.201702093 · Cited by 518
Phosphorene and Phosphorene‐Based Materials – Prospects for Future Applications
Batmunkh, M., Bat‐Erdene, M., & Shapter, J. G. (2016) · Advanced Materials · doi:10.1002/adma.201602254 · Cited by 494
Toward air-stable multilayer phosphorene thin-films and transistors
Kim, J.-S., Liu, Y., Zhu, W., Kim, S., Wu, D., Tao, L., Dodabalapur, A., Lai, K., & Akinwande, D. (2015) · Scientific Reports · doi:10.1038/srep08989 · Cited by 408
Metadata
- Authors
- Liu, H., Neal, A. T., Si, M., Du, Y., & Ye, P. D.
- Venue
- IEEE Electron Device Letters
- Published
- 2014-07
- Volume
- 35
- Issue
- 7
- Pages
- 795-797
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W1690449895
- Cited by
- 178
- References
- 0
- FWCI
- 14.44
- Type
- journal article
- Language
- en
- Open access
- green
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- Liu, H., Neal, A. T., Si, M., Du, Y., & Ye, P. D. (2014). The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights. IEEE Electron Device Letters. https://doi.org/10.1109/led.2014.2323951
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