Improving Analog Switching in HfO x -Based Resistive Memory With a Thermal Enhanced Layer
Abstract
Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfOx/TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.
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Two-terminal memristors show long retention and fast speed, but they usually undergo severe non-linear and asymmetric update properties.
“Two-terminal memristors show long retention and fast speed, but they usually undergo severe non-linear and asymmetric update properties.6,8,9,19,20”
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BackgroundNeuromorphic electronic systems
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A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems
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- Authors
- Wu, W., Wu, H., Gao, B., Deng, N., Yu, S., & Qian, H.
- Affiliations
- Tsinghua University (CN)
- Arizona State University (US)
- Venue
- IEEE Electron Device Letters
- Published
- 2017-08
- Volume
- 38
- Issue
- 8
- Pages
- 1019-1022
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2662553141
- Cited by
- 282
- References
- 3
- Citations by year
- 2026: 20 · 2025: 30 · 2024: 32 · 2023: 38 · 2022: 36 · 2021: 32 · 2020: 35 · 2019: 31 · 2018: 23 · 2017: 5
- FWCI
- 10.69
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Electron Device Letters (publishedVersion)
- Funders
- Key R&D Program of China (2016YFA0201801)
- National Hi-tech (R&D) Project of China (2014AA032901)
- Beijing Advanced Innovation Center for Future Chip and NSFC (61674089, 61674087, 61076115, 61674092)
- Beijing Municipal Science and Technology Project (D161100001716002)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- hafnium oxide, analog switching, neuromorphic computing, retention, RRAM arrays
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