Cited by 95Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPhase-change materials and chalcogenides

Investigation of statistical retention of filamentary analog RRAM for neuromophic computing

Zhao, Meiran, Wu, Huaqiang, Gao, Bin, Zhang, Qingtian, Wu, Wei, Wang, Shan, Xi, Yue, Wu, Dong +4 more·2017·2017 IEEE International Electron Devices Meeting (IEDM)

Abstract

The retention requirements of analog RRAM for neuromorphic computing applications are quite different from conventional RRAM for memory applications. Meanwhile, filamentary analog RRAM exhibits different retention behavior in comparison to strong-filament RRAM. For the first time, the statistical behaviors of read current noise and retention in a 1Kb filamentary analog RRAM array are investigated in this work. The conductance distribution of different levels is found to change with time, and the physical mechanism of the retention degradation is elucidated. From the experimental data, a compact model is developed in order to predict the statistical conductance evolution, which can effectively evaluate the impact of read noise and retention degradation in neuromorphic computing systems.

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Crossref · 10.1109/iedm.2017.8268522

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9 of 9 references verified0 citation errors · 0 not checkable

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Authors
Zhao, M., Wu, H., Gao, B., Zhang, Q., Wu, W., Wang, S., Xi, Y., Wu, D., Deng, N., Yu, S., Chen, H.-Y., & Qian, H.
Affiliations
  • Tsinghua University (CN)
  • Arizona State University (US)
Venue
2017 IEEE International Electron Devices Meeting (IEDM)
Publisher
IEEE
Published
2017-12
Pages
39.4.1-39.4.4
ISSN
0163-1918 (ISSN-L)
OpenAlex
W2786630036
Cited by
95
References
9
Citations by year
2026: 7 · 2025: 7 · 2024: 10 · 2023: 11 · 2022: 9 · 2021: 19 · 2020: 16 · 2019: 10 · 2018: 6
FWCI
12.38
Type
conference paper
Language
en
Open access
closed
Locations
Technical digest - International Electron Devices Meeting/Technical digest (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
Keywords
conductance distribution, neuromorphic computing, compact modeling, resistive random access memory

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