Investigation of statistical retention of filamentary analog RRAM for neuromophic computing
Abstract
The retention requirements of analog RRAM for neuromorphic computing applications are quite different from conventional RRAM for memory applications. Meanwhile, filamentary analog RRAM exhibits different retention behavior in comparison to strong-filament RRAM. For the first time, the statistical behaviors of read current noise and retention in a 1Kb filamentary analog RRAM array are investigated in this work. The conductance distribution of different levels is found to change with time, and the physical mechanism of the retention degradation is elucidated. From the experimental data, a compact model is developed in order to predict the statistical conductance evolution, which can effectively evaluate the impact of read noise and retention degradation in neuromorphic computing systems.
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Chen, P.-Y. (2018) · Cited by 1 · see citing works
RRAM Device Characterizations and Modelling
Huang, P. C., Gao, B., & Kang, J. (2021) · Springer eBooks · doi:10.1007/978-981-15-6912-8_11
Self-citationImproving model robustness to weight noise via consistency regularization
Hou, Y., Zhang, Q., Wang, N., & Wu, H. (2024) · Machine Learning Science and Technology · doi:10.1088/2632-2153/ad734a
Self-citationState-Aware Multibit Write Algorithm for TiOx-Based Resistive Switching Memory Devices
Shi, Y., Sachdev, M., & Miao, G.-X. (2025) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2024.3521653
Noise-Tolerant CIM-DNNs Explained
Meng, F.-H., Lee, E. Y., Wu, Y., Wang, Z., & Lu, W. D. (2025) · IEEE Transactions on Neural Networks and Learning Systems · doi:10.1109/tnnls.2025.3621473
Sakemi, Y., Awano, H., & Morie, T. (2025) · IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences · doi:10.1587/transfun.2025gci0001
In-memory computing based on CMOS-RRAM hybrid architectures
Esmanhotto, E. (2022) · theses.fr (ABES) · doi:10.70675/1cf79608z3789z4025z8efcz817e8621bdd9
Field- and Temperature-Induced Drift in Multi-Level Al-Doped HfO 2 RRAM
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Non-idealities in artificial synapses
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- Authors
- Zhao, M., Wu, H., Gao, B., Zhang, Q., Wu, W., Wang, S., Xi, Y., Wu, D., Deng, N., Yu, S., Chen, H.-Y., & Qian, H.
- Affiliations
- Tsinghua University (CN)
- Arizona State University (US)
- ORCID
- Venue
- 2017 IEEE International Electron Devices Meeting (IEDM)
- Publisher
- IEEE
- Published
- 2017-12
- Pages
- 39.4.1-39.4.4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W2786630036
- Cited by
- 95
- References
- 9
- Citations by year
- 2026: 7 · 2025: 7 · 2024: 10 · 2023: 11 · 2022: 9 · 2021: 19 · 2020: 16 · 2019: 10 · 2018: 6
- FWCI
- 12.38
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Technical digest - International Electron Devices Meeting/Technical digest (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- conductance distribution, neuromorphic computing, compact modeling, resistive random access memory
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