The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
Abstract
During recent years, silicon carbide (SiC) power electronics has gone from being a promising future technology to being a potent alternative to state-of-the-art silicon (Si) technology in high-efficiency, highfrequency, and high-temperature applications. The reasons for this are that SiC power electronics may have higher voltage ratings, lower voltage drops, higher maximum temperatures, and higher thermal conductivities. It is now a fact that several manufacturers are capable of developing and processing high-quality transistors at cost that permit introduction of new products in application areas where the benefits of the SiC technology can provide significant system advantages.
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Citations
Cites
Wang, J., Huang, A., Sung, W., Liu, Y., & Baliga, B. (2009) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2009.932583 · Cited by 260
Cited by
The Smart Transformer: Impact on the Electric Grid and Technology Challenges
Liserre, M., Buticchi, G., Andresen, M., De Carne, G., Costa, L. F., & Zou, Z.-X. (2016) · IEEE Industrial Electronics Magazine · doi:10.1109/mie.2016.2551418 · Cited by 445
Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs
Li, H., Munk-Nielsen, S., Wang, X., Maheshwari, R., Beczkowski, S., Uhrenfeldt, C., & Franke, W.-T. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2408054 · Cited by 306
Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling
Ugur, E., Yang, F., Pu, S., Zhao, S., & Akin, B. (2019) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2019.2891214 · Cited by 159
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions
Li, H., Zhao, S., Wang, X., Ding, L., & Mantooth, H. A. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3278270 · Cited by 135
Metadata
- Authors
- Rabkowski, J., Peftitsis, D., & Nee, H.
- Venue
- IEEE Industrial Electronics Magazine
- Published
- 2012-06
- Volume
- 6
- Issue
- 2
- Pages
- 17-26
- ISSN
- 1932-4529 (ISSN-L)
- OpenAlex
- W2152012503
- Cited by
- 422
- References
- 1
- FWCI
- 15.26
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
