The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
A study on performance degradation of SiC MOSFET for burn-in test of body diode
Abstract
The defect expansion in pn junction of SiC device due to current conduction degrades device performance. The long duration dc current conduction and free-wheeling in switching operation of body diode may have an impact on the conduction and blocking capability of SiC MOSFET. This paper experimentally evaluates the deterioration of SiC MOSFETs for long term dc current conduction of body diode and free-wheeling current conduction of body diode in switching operation of MOSFET. The test result reveals that the multiplication of on resistance and the increment of leakage current in blocking condition are found stemming from body diode conduction for some SiC MOSFETs.
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“On the other hand, the third quadrant conduction can expand defects in the PN junction of SiC MOSFET and degrades its performance [54].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [54]
Citations
Cites
An assessment of wide bandgap semiconductors for power devices
Hudgins, J. L., Simin, G., Santi, E., et al. (2003) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2003.810840 · Cited by 608
SiC power diodes provide breakthrough performance for a wide range of applications
Hefner, A. R., Singh, R., Lai, J., et al. (2001) · IEEE Transactions on Power Electronics · doi:10.1109/63.911152 · Cited by 185
An overview of Cree silicon carbide power devices
Richmond, J., Ryu, S., Das, M. K., et al. (2005) · doi:10.1109/pet.2004.1393789 · Cited by 59
Application-Oriented Unipolar Switching SiC Devices
Friedrichs, P., Mitlehner, H., Schörner, R., et al. (2002) · Materials science forum · doi:10.4028/www.scientific.net/msf.389-393.1185 · Cited by 43
Efficient power Schottky rectifiers of 4H-SiC
Itoh, A., Kimoto, T., & Matsunami, H. (2002) · doi:10.1109/ispsd.1995.515017 · Cited by 30
Status, prospects and commercialization of SiC power devices
STEPHANI, D. (2002) · Conference digest · doi:10.1109/drc.2001.937852 · Cited by 20
Deboy, G., Hulsken, H., Mitlehner, H., et al. (2002) · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · doi:10.1109/bipol.2000.886190 · Cited by 20
Large area 4H-SiC power MOSFETs
Agarwal, A. K., Ryu, S., Das, M. K., et al. (2002) · doi:10.1109/ispsd.2001.934585 · Cited by 11
Cited by
Sorted by citations
15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers
FREEDM Systems Center, N. C. S. U., & Huang, A. Q. (2017) · CPSS Transactions on Power Electronics and Applications · doi:10.24295/cpsstpea.2017.00012 · Cited by 182
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24
“On the other hand, the third quadrant conduction can expand defects in the PN junction of SiC MOSFET and degrades its performance [54].”
Background
Metadata
- Authors
- Funaki, T.
- Affiliations
- The University of Osaka (JP)
- Corresponding author
- Funaki, Tsuyoshi
- ORCID
- Funaki, Tsuyoshi
- Venue
- 2013 4th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG)
- Publisher
- IEEE
- Published
- 2013-07
- Pages
- 1-5
- OpenAlex
- W2080202942
- Cited by
- 18
- References
- 8
- Citations by year
- 2026: 1 · 2024: 3 · 2023: 3 · 2021: 1 · 2020: 1 · 2019: 3 · 2018: 2 · 2017: 1 · 2016: 3
- FWCI
- 1.22
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG) (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- SiC MOSFET, body diode, performance degradation, on-resistance, leakage current, blocking capability
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