Understanding the Thermal Characteristics of SiC Power MOSFET Device for Power Modules Design
Abstract
Due to the excellent characteristics of the SiC MOSFET, it is more and more widely used in power electronics applications. However, the device is confronted with severe thermal issues due to the smaller chip area. Accordingly, many pieces of research are aimed at better removing the heat energy of the device. However, while reducing thermal resistance, the number of layers inside the package tends to decrease, resulting in a decrease in its heat capacity. This is extremely detrimental to the reliability of the power module, therefore it is necessary to comprehensively consider thermal resistance and heat capacity. Besides, when designing and optimizing the power modules, the device is simply regarded as a uniform heat source, which will cause multiple key pieces of information to be ignored. Therefore, this paper analyzes the thermal characteristics of the SiC MOSFET under transient and steady-state conditions from the perspective of the device and packaging. Finally, guidelines for the design of power modules are provided based on the previous analysis.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Simultaneous optimization of electrical performance, thermal behavior, and mechanical integrity is essential.
“Accordingly, simultaneous optimization of electrical performance, thermal behavior, and mechanical integrity is essential [10-12,27,82].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [82]
Double-sided cooling, embedded packaging, and interleaved planar structures mitigate current imbalance across parallel dies and reduce parasitics.
“DSC, embedded packaging, and interleaved planar structures mitigate current imbalance across parallel dies and reduce parasitics [10,40,45,82].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [82]
Cites
A Survey of Wide Bandgap Power Semiconductor Devices
Millán, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A., & Rebollo, J. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2268900 · Cited by 2,685 · cited 1× · see citing works
“Due to the wide-bandgap characteristic of the SiC material, SiC MOSFET can work normally at higher voltage and temperature, which produces more benefits to the power electronics system than the conventional silicon device counterparts [1].”
BackgroundReview of Silicon Carbide Power Devices and Their Applications
She, X., Huang, A. Q., Lucia, O., & Ozpineci, B. (2017) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2652401 · Cited by 1,773 · see citing works
Co-designing electronics with microfluidics for more sustainable cooling
van Erp, R., Soleimanzadeh, R., Nela, L., Kampitsis, G. E., & Matioli, E. (2020) · Nature · doi:10.1038/s41586-020-2666-1 · Cited by 1,154 · see citing works
Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs
Wang, Z., Shi, X., Tolbert, L. M., Wang, F., Liang, Z., Costinett, D. J., & Blalock, B. J. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2416358 · Cited by 268 · see citing works
Self-citationAccurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions
Tsibizov, A., Kovacevic-Badstuebner, I., Kakarla, B., & Großner, U. (2019) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2917221 · Cited by 135 · see citing works
Electrical and Electronics Technical Team Roadmap
None (2013) · doi:10.2172/1220125 · Cited by 133 · see citing works
Packaged Ga 2 O 3 Schottky Rectifiers With Over 60-A Surge Current Capability
Xiao, M., Wang, B., Liu, J., Zhang, R., Zhang, Z., Ding, C., Lu, S., Sasaki, K., Lu, G., Buttay, C., et al. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049966 · Cited by 120 · see citing works
Ding, C., Liu, H., Ngo, K. D. T., Burgos, R. P., & Lu, G. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3070326 · Cited by 116 · see citing works
Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress
Liu, J., Zhang, G., Wang, B., Li, W., & Wang, J. (2019) · IEEE Electron Device Letters · doi:10.1109/led.2019.2953235 · Cited by 115 · see citing works
van Erp, R., Kampitsis, G., & Matioli, E. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2959736 · Cited by 97 · see citing works
Yang, F., Lixin, J., Wang, L., Zhang, F., Wang, B., Zhao, C., Wang, J., Bayer, C., & Ferreira, J. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3106316 · Cited by 80 · see citing works
Self-citationA Highly Integrated PCB Embedded GaN Full-Bridge Module With Ultralow Parasitic Inductance
Qi, Z., Pei, Y., Wang, L., Yang, Q., & Wang, K. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3128694 · Cited by 66 · see citing works
Self-citationPower Electronics Cooling Effectiveness Versus Thermal Inertia
Meysenc, L., Jylhakallio, M., & Barbosa, P. M. (2005) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2005.846548 · Cited by 65 · see citing works
Mu, W., Wang, L., Wang, B., Zhang, T., Yang, F., Gan, Y., & Zhang, H. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3125329 · Cited by 54 · see citing works
Self-citationPlanar Interconnect Technology for Power Module System Integration
Weidner, K., Kaspar, M., & Seliger, N. (2012) · Cited by 48 · see citing works
Air-Cooling System Optimization for IGBT Modules in MMC Using Embedded O-Shaped Heat Pipes
Wang, B., Wang, L., Yang, F., Mu, W., Qin, M., Zhang, F., Ma, D., Wang, J., & Liu, J. (2021) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2021.3054918 · Cited by 48 · see citing works
Self-citationMa, D., Xiao, G., Zhang, T., Yang, F., Zhu, M., Yuan, T., Ma, L., Gan, Y., & Wang, L. (2022) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3210440 · Cited by 47 · see citing works
Self-citationEnablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview
Bhadoria, S., Dijkhuizen, F., Raj, R., Wang, X., Xu, Q., Matioli, E., Kostov, K., & Nee, H. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3223730 · Cited by 37 · see citing works
Whitt, R., Huitink, D. R., Emon, A. I., Deshpande, A., & Luo, F. L. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3015226 · Cited by 36 · see citing works
Failure mechanism and improvement potential of IGBT's short circuit operation
Hille, F., Umbach, F., Raker, T., & Roth, R. (2010) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · Cited by 29 · see citing works
Sadik, D.-P., Colmenares, J., Lim, J., Bakowski, M., & Nee, H. (2020) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2020.2972442 · Cited by 24 · see citing works
Power Cu metallization for future power devices — Process integration concept and reliability
Roth, R., Schulze, H., Schäffer, C., Hille, F., Umbach, F., Mertens, G., Rohn, N., & Bolowski, D. (2016) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2016.7520811 · Cited by 17 · see citing works
A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs
Du, H., & Iannuzzo, F. (2020) · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · doi:10.1109/wipdaasia49671.2020.9360256 · Cited by 6 · see citing works
Flagged first, then by citations
Cited by
Sorted by citations
Soomro, H. A., Khir, M. H. M., Zulkifli, S. A. B. M., Abro, G. E. M., & Abualnaeem, M. M. (2025) · Results in Engineering · doi:10.1016/j.rineng.2025.104679 · Cited by 49 · see citing works
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34 · see citing works
Review on Short-Circuit Protection Methods for SiC MOSFETs
Lyu, G., Ali, H., Tan, H., Peng, L., & Ding, X. (2024) · Energies · doi:10.3390/en17174523 · Cited by 11 · see citing works
Plenty of Room at the Bottom and Top: Future Perspectives on GaN Power Devices and Applications
Yang, Z., Yang, X., Liu, J., Cui, H., Lei, K., Guo, Y., Gao, T., Chan, P. C. H., Xia, L., Wang, H., et al. (2026) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2026.3675006 · Cited by 6 · see citing works
Self-citationCui, H., Wang, L., Jin, H., Kong, H., Wang, F., Dong, X., Cheng, Z., & Gao, K. (2024) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec48139.2024.10509511 · Cited by 1 · see citing works
Self-citationThermal Investigation of SiC Die-Top Layers Under Short-Circuit Operation
Abotaleb, Y., Muravleva, E., & Wang, J. (2025) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce58356.2025.11260290 · Cited by 1 · see citing works
A Fast Steady-state Thermal Modeling of Power Modules Based on Fourier Analytic Series
Zhou, J., Cui, H., Wnag, L., Gan, Y., Tang, Z., & Gao, K. (2024) · International Power Electronics and Motion Control Conference (EPE-PEMC) · doi:10.1109/ipemc-ecceasia60879.2024.10567496
Self-citationWang, G., Ren, W., Chen, D., Li, C., Liu, B., Cai, S., Yang, H., & Pu, J. (2025) · SSRN Electronic Journal · doi:10.2139/ssrn.5119650
- Authors
- Cui, H., Li, B., Kong, H., Yang, F., Wang, F., Wang, L., & Gao, K.
- Affiliations
- Xi'an Jiaotong University (CN)
- State Grid Shanghai Electric Power Research Institute,Shanghai,China
- Venue
- 2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)
- Publisher
- IEEE
- Published
- 2023-06-09
- Pages
- 1088-1095
- OpenAlex
- W4386082991
- Cited by
- 8
- References
- 23
- Citations by year
- 2026: 1 · 2025: 4 · 2024: 3
- FWCI
- 3.92
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG) (publishedVersion)
- Funders
- State Grid Corporation of China
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
- Keywords
- SiC MOSFET, power modules, thermal resistance, heat capacity, transient thermal analysis, steady-state thermal analysis, power module packaging, power electronics reliability
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
