The DOI matches its Crossref record; 23 of the 24 references it cites were found in a registry or an index; none of the 15 sources its claims cite is checked for support yet.
Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs
Open accessAbstract
This paper demonstrates the dynamic behaviors of paralleled high power IGBTs using trench and fieldstop technologies. Four IGBTs are paralleled and standard deviation is adopted to represent the imbalance. Experiments are conducted under three different operation conditions and at different temperatures ranging from $-25^{\circ}C$ to $125^{\circ}C$ . The experimental results show that operation at very low and very high temperatures usually aggravates the switching behaviors. There is a trade-off between the balance and the losses at low temperatures. These results can help in the design of heat sinks in paralleling applications confronting very low temperatures.
Overview
CoChat Summary
TL;DR
This paper experimentally studies dynamic current-sharing behavior of four paralleled high-power trench/fieldstop IGBT modules across -25°C, 25°C, and 125°C under three operating conditions. It finds that 25°C generally gives the most balanced dynamic behavior, while very low and very high temperatures aggravate imbalance, with a trade-off between low-temperature switching losses and paralleling balance.
Key findings
- Turn-on and turn-off di/dt imbalance, measured by standard deviation, is smallest at 25°C and rises at both lower and higher temperatures; the largest turn-on di/dt imbalance occurs at -25°C under each condition.
- Turn-on loss E_on increases slightly at low temperature but more strongly above 25°C; SD E_on is smallest at 25°C and increases with higher output power, since condition A (357.5A/820V) is always higher than B (325A/600V), and B higher than C (35A/820V).
- Turn-off E_off shows only a slight increase from -25°C to 25°C under conditions A and B, then a higher increase from 25°C to 125°C; SD E_off is highest at -25°C and rises linearly above 25°C, with temperature having a greater impact on E_off imbalance than output power level.
- Reverse recovery current I_rec(max) increases linearly with temperature; SD I_rec(max) is smallest near 25°C, and at 125°C it is larger under each condition. High temperature also improves V_ce(max) balance, while condition B at 600V shows larger SD V_ce(max) than conditions A and C at 820V.
Methods
- Four Infineon FF600R12ME4 half-bridge IGBT modules rated 1200V/600A, all with identical data codes, were paralleled and tested using a double-pulse test to extract turn-off behavior in the first pulse and turn-on behavior in the second pulse.
- Three operating conditions were used: A = 357.5A per module, 820V DC bus; B = 325A per module, 600V DC bus; C = 35A per module, 820V DC bus. Each was tested at ambient temperatures of -25°C, 25°C, and 125°C.
- Imbalance was quantified using standard deviation across four module average values, with each test repeated three times; dynamic parameters included di/dt, E_on, t_on, E_off, V_ce(max), t_f(off), and I_rec(max).
Limitations
- The paper states that tests at high temperatures were only executed at 125°C, justified by prior research as sufficient to reflect a real trend.
- The paper states that only dynamic behaviors are investigated, not static behavior, because dynamic behavior is more difficult to achieve in high-power applications.
- Evident from the text: the study uses only four modules of a single device type and a limited set of operating conditions, so generalization to other IGBT technologies, module counts, or circuit layouts is not established.
Model-written summary. Check it against the paper before relying on it.
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Claims the paper makes
34 Own interpretation · 31 Own result · 13 Sources not found · 3 No basis given · 1 Own method
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“It can be clearly seen that under very high and very low temperature conditions, the SD di/dt (rev) values are much bigger.”
§ Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs > B. Reverse Recovery of the Diode
boostedstates an association- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Fig. 4 (b) shows that a higher output power level leads to a more imbalanced E on distribution among the four paralleled IGBTs regardless of the temperature, since condition A is always higher than B, and B is always higher than C.”
§ Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs > A. Turn-on Behaviors of Paralleling IGBTs
plainstates a cause- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“In addition, the SD E off rises linearly with temperatures beyond 25°C.”
§ Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs > B. Turn-off Behaviors of Paralleling IGBTs
plainstates a cause- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“It can be seen from Fig. 9(a) that there is a bigger increase of t f(off) due to temperature than t r(on) (see Fig. 4(a)).”
§ Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs > B. Turn-off Behaviors of Paralleling IGBTs
plainstates a cause- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“However, as Fig. 7(a) shows, the turn-off loss in this study rises with a reduction in temperature.”
§ Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs > B. Reverse Recovery of the Diode
plainstates a cause- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
47 more claims
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- It may state two separate claims as one. 22
- Probably not a substantial claim. 10
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
Each contradiction between two passages listed here was confirmed by an independent check.
Rated major: it would touch a result — a value a result rests on, reported and recomputed p-values on opposite sides of the significance level, two passages that conflict with no sign which is right, or a cited work retracted before this paper was published.
In the paper
§ Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs > B. Turn-off Behaviors of Paralleling IGBTs
“There is only a slight increase of E off from -25°C to 25°C under conditions A and B”
§ Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs > B. Reverse Recovery of the Diode
“However, as Fig. 7(a) shows, the turn-off loss in this study rises with a reduction in temperature.”
Rated minor: it would not touch a result — a value no result rests on, a p-value that stays on the same side of the significance level, or a conflict that is clerical, resolved elsewhere in the paper, or outside its own findings.
In the paper
§ Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs > B. Turn-off Behaviors of Paralleling IGBTs
“there is a bigger increase of t f(off) due to temperature than t r(on) (see Fig. 4(a))”
§ Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs > A. Turn-on Behaviors of Paralleling IGBTs
“Fig. 4 (a) shows that there is a slight E on increase at a low temperature, while there is a bigger E on increase at over 25°C.”
Citations
Cites
A Literature Review of IGBT Fault Diagnostic and Protection Methods for Power Inverters
Lu, B., & Sharma, S. K. (2009) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2009.2027535 · Cited by 985
Trends in power semiconductor devices
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Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence
Bryant, A. T., Yang, S., Mawby, P., Xiang, D., Ran, L., Tavner, P. J., & Palmer, P. (2011) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2125803 · Cited by 236
IGBT modules : technologies, driver and application
Volke, A. (2012) · Cited by 177
Circuit simulator models for the diode and IGBT with full temperature dependent features
Palmer, P., Santi, E., Hudgins, J. L., Kang, X., Joyce, J. C., & Eng, P. (2003) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2003.816194 · Cited by 163
Power Converter EMI Analysis Including IGBT Nonlinear Switching Transient Model
Ma, J., & Ma, W. (2006) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2006.882009 · Cited by 138
Senturk, O. S., Helle, L., Munk‐Nielsen, S., Rodríguez, P., & Teodorescu, R. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2011.2182661 · Cited by 130
Static and dynamic behavior of paralleled IGBTs
Letor, R. (1992) · IEEE Transactions on Industry Applications · doi:10.1109/28.126748 · Cited by 86
Monitoring of paralleled IGBT/diode modules
Hofer-Noser, P., & Karrer, N. (1999) · IEEE Transactions on Power Electronics · doi:10.1109/63.761687 · Cited by 58
Research works printed but not linked: 1
- 2011, IEEE Trans. Power Electron., 26, 298
Cited by
Fault diagnosis based on the quantification of the fault features in a rotary machine
Lee, J., Park, B., & Lee, C. (2020) · Applied Soft Computing · doi:10.1016/j.asoc.2020.106726 · Cited by 20
Current sharing control strategy for IGBTs connected in Parallel
Perez-Delgado, R., Velasco-Quesada, G., & Roman-Lumbreras, M. (2016) · Journal of Power Electronics · doi:10.6113/jpe.2016.16.2.769 · Cited by 12
Research on Mechanism and Suppression Method of Current Unbalance of Parallel IGBTs
Li, J., Han, L., Liang, L., Chen, Z., Wang, R., & Tan, G. (2018) · IEEE International Power Electronics and Application Conference and Exposition (PEAC) · doi:10.1109/peac.2018.8590482 · Cited by 5
Analysis of Coupling Characteristics on Power Loop for Paralleled IGBTs
Mu, F., Liu, Y., Jia, J., Hao, X., Yang, Y., & Huang, X. (2020) · 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia) · doi:10.1109/ipemc-ecceasia48364.2020.9368153 · Cited by 3
Lee, H., Lee, Y., Jo, M., Nam, S., Jo, J., & Lee, C. (2023) · Sensors · doi:10.3390/s23187857 · Cited by 3
Metadata
- Authors
- Wu, Y., Sun, Y., & Lin, Y.
- Affiliations
- Fudan University (CN)
- ORCID
- Venue
- Journal of Power Electronics
- Published
- 2014-07-20
- Volume
- 14
- Issue
- 4
- Pages
- 788-795
- ISSN
- 1598-2092 (ISSN-L)
- OpenAlex
- W2003368116
- Semantic Scholar
- 53f4dfa5b8d2f901f31cb3dbbea6c009c66c7dde
- Cited by
- 5
- References
- 24
- Citations by year
- 2023: 1 · 2020: 2 · 2018: 1 · 2016: 1
- FWCI
- 0.16
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Journal of Power Electronics (publishedVersion)
- Funders
- National Natural Science Foundation of China (61374129)
- Fudan University
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electric Power Systems and Control
- Keywords
- trench IGBT, dynamic balancing, switching behavior, temperature dependence, power losses, heat sinks
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- CoChat. (2026). Citation check: Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs. https://app.cochat.ai/papers/10.6113/jpe.2014.14.4.788
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- Wu, Y., Sun, Y., & Lin, Y. (2014). Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs. Journal of Power Electronics. https://doi.org/10.6113/jpe.2014.14.4.788
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