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Alpha-particle-induced soft errors in dynamic memories
Abstract
A new physical soft error mechanism in dynamic RAM's and CCD's is the upset of stored data by the passage of alpha particles through the memory array area. The alpha particles are emitted by the radioactive decay of uranium and thorium which are present in parts-per-million levels in packaging materials. When an alpha particle penetrates the die surface, it can create enough electron-hole pairs near a storage node to cause a random, single-bit error. Results of experiments and measurements of alpha activity of materials are reported and a physical model for the soft error is developed. Implications for the future of dynamic memories are also discussed.
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Citations
Cited by
DRAM errors in the wild: a large-scale field study
Schroeder, B., Pinheiro, E., & Weber, W.-D. (2009) · Proceedings of the eleventh international joint conference on Measurement and modeling of computer systems · doi:10.1145/1555349.1555372 · Cited by 557
DIVA: a reliable substrate for deep submicron microarchitecture design
Austin, T. M. (2003) · MICRO-32. Proceedings of the 32nd Annual ACM/IEEE International Symposium on Microarchitecture · doi:10.1109/micro.1999.809458 · Cited by 380
Resilient K-d Trees: K-Means in Space Revisited
Gieseke, F., Moruz, G., & Vahrenhold, J. (2010) · 2010 IEEE International Conference on Data Mining · doi:10.1109/icdm.2010.94 · Cited by 3
Metadata
- Authors
- May, T. C., & Woods, M. H.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1979-01
- Volume
- 26
- Issue
- 1
- Pages
- 2-9
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2023856022
- Cited by
- 864
- References
- 0
- FWCI
- 38.08
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Alpha-particle-induced soft errors in dynamic memories. https://app.cochat.ai/papers/10.1109/t-ed.1979.19370
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- May, T. C., & Woods, M. H. (1979). Alpha-particle-induced soft errors in dynamic memories. IEEE Transactions on Electron Devices. https://doi.org/10.1109/t-ed.1979.19370
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