The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor
Abstract
A model of surface ionization and complexation of surface hydroxyl groups on the gate insulator surface is adapted in conjunction with electronic device physics to arrive at a generalized theory for the current-voltage characteristics of an electrolyte-insulator-semiconductor field-effect transistor (EISFET) in electrolyte solutions. EISFET's that employ thermally grown silicon dioxide were tested in simple electrolytes that contain Na+, K+, and Li+ions titrated in apH range from 2 to 9. Experimental results show good agreement with the theory. The model successfully explainspH sensitivity, as well as the ion interference effect, of the EISFET working as apH sensor. From this model, it is conluded that, among all the electrolyte parameters associated with an EISFET, the surface site density of the hydroxyl groups Nsand the separation of surface ionization constants\Delta pKare the primary factors to consider when employing EISFET's aspH sensors. For high sensitivity and good selectivity, large Nsand small\Delta pKvalues are required.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements
Bergveld, P. (1970) · IEEE Transactions on Biomedical Engineering · doi:10.1109/tbme.1970.4502688 · Cited by 2,134
Metadata
- Authors
- Fung, C. D., Cheung, P. W., & Ko, W. H.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1986-01
- Volume
- 33
- Issue
- 1
- Pages
- 8-18
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W1979127249
- Cited by
- 322
- References
- 1
- FWCI
- 3.02
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor. https://app.cochat.ai/papers/10.1109/t-ed.1986.22429
- The paper
- Fung, C. D., Cheung, P. W., & Ko, W. H. (1986). A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor. IEEE Transactions on Electron Devices. https://doi.org/10.1109/t-ed.1986.22429
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
