Cited by 98Advanced Memory and Neural ComputingElectrical and Thermal Properties of MaterialsFerroelectric and Negative Capacitance Devices

A Generic Model of Memristors With Parasitic Components

Sah, Maheshwar Pd., Yang, Changju, Kim, Hyongsuk, Muthuswamy, Bharathwaj, Jevtic, Jovan, Chua, Leon·2015·IEEE Transactions on Circuits and Systems I: Regular Papers

Abstract

In this paper, a generic model of memristive systems, which can emulate the behavior of real memristive devices is proposed. Non-ideal pinched hysteresis loops are sometimes observed in real memristive devices. For example, the hysteresis loops may deviate from the origin over a broad range of amplitude A and frequency f of the input signal. This deviation from the ideal case is often caused by parasitic circuit elements exhibited by real memristive devices. In this paper, we propose a generic memristive circuit model by adding four parasitic circuit elements, namely, a small capacitance, a small inductance, a small DC current source, and a small DC voltage source, to the memristive device. The adequacy of this model is verified experimentally and numerically with two thermistors (NTC and PTC) memristors.

Integrity signals

Registry

Crossref · 10.1109/tcsi.2014.2373674

Cites

8 of 8 references verified0 citation errors · 0 not checkable

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  • Pinched hysteresis loops provide the characteristic fingerprints of all memristors.

    “Not only do pinched hysteresis loops provide the characteristic fingerprints of all memristors, they all behave in a similar fashion as a function of the frequency of the periodic excitations [21].”
  • At sufficiently high frequencies, the pinched hysteresis loops must tend to straight lines (whose slope depends on the amplitude of the exciting periodic waveform) for all Generic Memristors, or to a single-valued function (whose precise curve varies with the amplitude of the periodic input signals) in the v vs. i plane for all Extended Memristors.

    “Moreover, at sufficiently high frequencies, the pinched hysteresis loops must tend to straight lines (whose slope depends on the amplitude of the exciting periodic waveform) for all Generic Memristors , or to a single-valued function (whose precise curve varies with the amplitude of the periodic input signals) in the v vs. i plane for all Extended Memristors [21], [5], [”
  • A voltage-controlled PTC thermistor can be modeled as a non-ideal Generic Memristor.

    “Example 5.2 Positive-temperature coefficient (PTC) thermistor [6], [21] A voltage controlled PTC thermistor can be modeled as follow:”

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Authors
Sah, M. P., Yang, C., Kim, H., Muthuswamy, B., Jevtic, J., & Chua, L.
Affiliations
  • University of Notre Dame (US)
  • Jeonbuk National University (KR)
  • Milwaukee School of Engineering (US)
  • University of California, Berkeley (US)
Venue
IEEE Transactions on Circuits and Systems I: Regular Papers
Published
2015-03
Volume
62
Issue
3
Pages
891-898
ISSN
  • 1549-8328 (ISSN-L)
  • 1558-0806
OpenAlex
W2033592371
Cited by
98
References
8
Citations by year
2026: 3 · 2025: 10 · 2024: 8 · 2023: 12 · 2022: 10 · 2021: 7 · 2020: 5 · 2019: 8 · 2018: 12 · 2017: 8 · 2016: 8 · 2015: 6 · 2014: 1
FWCI
5.46
Type
journal article
Language
en
Open access
closed
Locations
IEEE Transactions on Circuits and Systems I Regular Papers (publishedVersion)
Funders
  • U.S. Air Force (FA9550-13-1-0136)
  • Korean government (2013R1A2A2A01068683, 2012R1A1A2044078)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electrical and Thermal Properties of Materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Keywords
memristors, parasitic components, NTC thermistor, PTC thermistors, small-signal modeling

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