Cited by 659Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesChaos control and synchronization

Three Fingerprints of Memristor

Adhikari, Shyam Prasad, Sah, Maheshwar Pd., Kim, Hyongsuk, Chua, Leon O.·2013·IEEE Transactions on Circuits and Systems I: Regular Papers

Abstract

This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched hysteresis loop” in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.

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Crossref · 10.1109/tcsi.2013.2256171

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  • Numerous examples of pinched hysteresis loops of memristors can be found in [3], [13], [22].

    “Numerous examples of pinched hysteresis loops of memristors can be found in [3], [13], [22].”

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Authors
Adhikari, S. P., Sah, M. P., Kim, H., & Chua, L. O.
Affiliations
  • Jeonbuk National University (KR)
  • University of California, Berkeley (US)
Venue
IEEE Transactions on Circuits and Systems I: Regular Papers
Published
2013-11
Volume
60
Issue
11
Pages
3008-3021
ISSN
  • 1549-8328 (ISSN-L)
  • 1558-0806
OpenAlex
W2084914578
Cited by
659
References
0
Citations by year
2026: 34 · 2025: 56 · 2024: 59 · 2023: 70 · 2022: 76 · 2021: 55 · 2020: 60 · 2019: 49 · 2018: 55 · 2017: 36 · 2016: 28 · 2015: 46 · 2014: 28 · 2013: 6 · 2012: 1
FWCI
21.60
Type
journal article
Language
en
Open access
closed
Locations
IEEE Transactions on Circuits and Systems I Regular Papers (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Physics and Astronomy › Statistical and Nonlinear Physics › Chaos control and synchronization
Keywords
memristors, pinched hysteresis loop, hysteresis loop area, frequency dependence, current-voltage characteristics

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