Cited by 23Radio Frequency Integrated Circuit DesignAdvanced Photonic Communication SystemsSemiconductor Lasers and Optical Devices

The DOI matches its Crossref record; 41 of the 44 references it cites were found in a registry or an index.

A 10-Gb/s −18.8 dBm Sensitivity 5.7 mW Fully-Integrated Optoelectronic Receiver With Avalanche Photodetector in 0.13-$\mu$ m CMOS

Nayak, Spoorthi, Ahmed, Abdelrahman H., Sharkia, Ahmad, Ramani, Ajith Sivadhasan, Mirabbasi, Shahriar, Shekhar, Sudip·2019·IEEE Transactions on Circuits and Systems I: Regular Papers

Abstract

Avalanche photodetectors (APDs) improve the sensitivity of optoelectronic (O/E) receivers (RXs) due to their high multiplication gain and responsivity. When implemented monolithically with a CMOS transimpedance amplifier (TIA) on the same chip, they provide further advantages, such as low cost and reduced parasitics. However, APDs require high bias voltages, are sensitive to variations in operating conditions, and have a limited gain-bandwidth product. This paper presents an 850 nm APD implemented in a standard 0.13-μm CMOS process with a responsivity of 3.92 A/W and a large-signal -3 dB bandwidth of 3.5 GHz. Advantages of on-chip integration with a TIA are described and a noise-canceling active balun following the single-ended TIA is presented. The O/E-RXs front-end achieves a measured sensitivity of -18.8 dBm, the best-reported among 10 Gb/s linear CMOS TIAs operating at 850 nm. The energy/bit is 0.57 pJ/b. An on-chip voltage booster is described and implemented to generate a large APD bias using nominal CMOS voltage supplies. A modified hill-climbing algorithm is also presented that can enable bias stabilization for the voltage booster and the optoelectronic front-end for a complete all-bulk-CMOS implementation.

Overview

Integrity signals

Registry

Crossref · 10.1109/tcsi.2019.2909284

Cites

41 of 41 references verified0 citation errors · 0 not checkable

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  • APDs also need to be biased optimally and stabilized for temperature and voltage drift, but that is less challenging than what has already been demonstrated for microring circuits.

    “APDs also need to be biased optimally and stabilized for temperature and voltage drift, but that is less challenging117 than what has already been demonstrated for microring circuits50.”

    From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [117]

  • Although relatively easier to achieve in Si APDs at 850 nm, simultaneous (at the same bias voltage) optimization of gain-BW-noise has remained challenging for low-voltage Si/Ge APDs or Si resonant APDs in C/L/O bands.

    “Although relatively easier to achieve in Si APDs at 850 nm117, simultaneous (at the same bias voltage) optimization of gain-BW-noise has remained challenging for low-voltage Si/Ge APDs118 or Si resonant APDs119,120 in C/L/O bands.”

    From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [117]

Citations

Cites

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3 of the 44 references couldn’t be matched to a known paper.

Research works printed but not linked: 3

  1. guckenberger, 2005, 1 V, 10 mW, 10 Gb/s CMOS optical receiver front-end, IEEE Radio Frequency Integrated Circuits Symp Dig Papers, 309
  2. morita, 2014, A $12\times5$ two-dimensional optical I/O array for 600 Gb/schipto-chip interconnect in 65 nm CMOS, IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers, 140
  3. hamamatsu-photonics, 2011, Si APD

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Metadata

Authors
Nayak, S., Ahmed, A. H., Sharkia, A., Ramani, A. S., Mirabbasi, S., & Shekhar, S.
Affiliations
  • Semtech (Canada) (CA)
  • University of British Columbia (CA)
Venue
IEEE Transactions on Circuits and Systems I: Regular Papers
Published
2019-08
Volume
66
Issue
8
Pages
3162-3173
ISSN
  • 1549-8328 (ISSN-L)
  • 1558-0806
OpenAlex
W2944562250
Cited by
23
References
44
Citations by year
2026: 3 · 2025: 1 · 2024: 5 · 2023: 5 · 2022: 3 · 2021: 2 · 2020: 3 · 2019: 1
FWCI
0.81
Type
journal article
Language
en
Open access
closed
Locations
IEEE Transactions on Circuits and Systems I Regular Papers (publishedVersion)
Funders
  • Natural Sciences and Engineering Research Council of Canada
  • Intel Corporation
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Radio Frequency Integrated Circuit Design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Photonic Communication Systems
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
Keywords
optoelectronic receiver, avalanche photodetectors, transimpedance amplifier, CMOS integration, 10 Gb/s, receiver sensitivity, active balun, noise cancellation, hill climbing algorithm, energy efficiency, gain-bandwidth product

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