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Metal nanocrystal memories-part II: electrical characteristics
Abstract
This paper describes the electrical characteristics of the metal nanocrystal memory devices continued from the previous paper [see ibid., vol. 49, p. 1606-13, Sept. 2002]. Devices with Au, Ag, and Pt nanocrystals working in the F-N tunneling regime have been investigated and compared with Si nanocrystal memory devices. With hot-carrier injection such as the programming mechanism, retention time up to 10/sup 6/ s has been observed and 2-bit-per-cell storage capability has been demonstrated and analyzed. The concern of the possible metal contamination is also addressed by current-voltage (I-V) and capacitance-voltage (C-V) characterizations. The extracted inversion layer mobility and minority carrier lifetime suggest that the substrate is free from metal contamination with continuous operations.
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Cited by
Metal nanocrystal memories. I. Device design and fabrication
Liu, Z., Lee, C., Narayanan, V., Pei, G., & Kan, E. C. (2002) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2002.802617 · Cited by 482
Self-citationA wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
Kim, J., Son, D., Lee, M., Song, C., Song, J.-K., Koo, J. H., Lee, D. J., Shim, H. J., Kim, J. H., Lee, M., et al. (2016) · Science Advances · doi:10.1126/sciadv.1501101 · Cited by 164
Metadata
- Authors
- Liu, Z., Lee, C., Narayanan, V., Pei, G., & Kan, E. C.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2002-09
- Volume
- 49
- Issue
- 9
- Pages
- 1614-1622
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2162053452
- Cited by
- 188
- References
- 0
- FWCI
- 8.76
- Type
- journal article
- Language
- en
- Open access
- closed
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- Liu, Z., Lee, C., Narayanan, V., Pei, G., & Kan, E. C. (2002). Metal nanocrystal memories-part II: electrical characteristics. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2002.802618
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